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Charge compensation semiconductor device

  • US 8,901,642 B2
  • Filed: 03/07/2012
  • Issued: 12/02/2014
  • Est. Priority Date: 03/07/2012
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising a semiconductor body having a first surface defining a vertical direction, and a source metallization arranged on the first surface, in a vertical cross-section the semiconductor body further comprising:

  • a drift region of a first conductivity type;

    at least two compensation regions of a second conductivity type each of which forms a pn-junction with the drift region and is in low resistive electric connection with the source metallization;

    a drain region of the first conductivity type having a maximum doping concentration higher than a maximum doping concentration of the drift region; and

    a third semiconductor layer of the first conductivity type arranged between the drift region and the drain region and comprising at least one of a floating field plate and a floating semiconductor region of the second conductivity type forming a pn-junction with the third semiconductor layer.

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