Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection
First Claim
1. A diode comprising:
- a silicon carbide drift region;
a Schottky contact on the silicon carbide drift region and forming a Schottky junction with the silicon carbide drift region; and
a silicon carbide junction barrier region disposed within the silicon carbide drift region of the diode, the silicon carbide junction barrier region comprising;
a plurality of first regions of silicon carbide having respective first doping concentrations in the silicon carbide drift region of the diode; and
a plurality of second regions of silicon carbide in the silicon carbide drift region and disposed between the plurality of first regions of silicon carbide and the Schottky contact of the diode and in electrical contact with the plurality of first regions of silicon carbide and the Schottky contact so that the plurality of first regions of silicon carbide are spaced apart from the Schottky contact by the plurality of second regions of silicon carbide, the plurality of second regions of silicon carbide having respective second doping concentrations that are less than the first doping concentrations and forming resistive ohmic contacts with the Schottky contact, wherein the second regions of silicon carbide have a surface doping concentration at the resistive ohmic contacts of from 1017 cm−
3 to about 5×
1018 cm−
3; and
the silicon carbide drift region has a first conductivity type opposite a second conductivity type of the first regions and the second regions;
wherein the plurality of first and second regions define a junction barrier grid that is configured to shield the Schottky junction when a reverse bias is applied to the diode.
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Accused Products
Abstract
Integral structures that block the current conduction of the built-in PiN diode in a junction barrier Schottky (JBS) structure are provided. A Schottky diode may be incorporated in series with the PiN diode, where the Schottky diode is of opposite direction to that of the PiN diode. A series resistance or and insulating layer may be provided between the PiN diode and a Schottky contact. Silicon carbide Schottky diodes and methods of fabricating silicon carbide Schottky diodes that include a silicon carbide junction barrier region disposed within a drift region of the diode are also provided. The junction barrier region includes a first region of silicon carbide having a first doping concentration in the drift region of the diode and a second region of silicon carbide in the drift region and disposed between the first region of silicon carbide and a Schottky contact of the Schottky diode. The second region is in contact with the first region of silicon carbide and the Schottky contact. The second region of silicon carbide has a second doping concentration that is less than the first doping concentration.
173 Citations
10 Claims
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1. A diode comprising:
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a silicon carbide drift region; a Schottky contact on the silicon carbide drift region and forming a Schottky junction with the silicon carbide drift region; and a silicon carbide junction barrier region disposed within the silicon carbide drift region of the diode, the silicon carbide junction barrier region comprising; a plurality of first regions of silicon carbide having respective first doping concentrations in the silicon carbide drift region of the diode; and a plurality of second regions of silicon carbide in the silicon carbide drift region and disposed between the plurality of first regions of silicon carbide and the Schottky contact of the diode and in electrical contact with the plurality of first regions of silicon carbide and the Schottky contact so that the plurality of first regions of silicon carbide are spaced apart from the Schottky contact by the plurality of second regions of silicon carbide, the plurality of second regions of silicon carbide having respective second doping concentrations that are less than the first doping concentrations and forming resistive ohmic contacts with the Schottky contact, wherein the second regions of silicon carbide have a surface doping concentration at the resistive ohmic contacts of from 1017 cm−
3 to about 5×
1018 cm−
3; and
the silicon carbide drift region has a first conductivity type opposite a second conductivity type of the first regions and the second regions;wherein the plurality of first and second regions define a junction barrier grid that is configured to shield the Schottky junction when a reverse bias is applied to the diode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification