Hybrid copper interconnect structure and method of fabricating same
First Claim
1. An interconnect structure comprising:
- a patterned dielectric material having at least one opening located therein;
a dual material liner located at least on sidewalls of the patterned dielectric material within the at least one opening;
a first copper region containing a first impurity level located within a bottom region of said at least one opening; and
a second copper region containing a second impurity level located within a top region of said at least one opening and atop the first copper region, wherein said first impurity level of said first copper region is less than the second impurity level of said second copper region.
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Abstract
A hybrid interconnect structure containing copper regions that have different impurities levels within a same opening is provided. In one embodiment, the interconnect structure includes a patterned dielectric material having at least one opening located therein. A dual material liner is located at least on sidewalls of the patterned dielectric material within the at least one opening. The structure further includes a first copper region having a first impurity level located within a bottom region of the at least one opening and a second copper region having a second impurity level located within a top region of the at least one opening and atop the first copper region. In accordance with the present disclosure, the first impurity level of the first copper region is different from the second impurity level of the second copper region.
95 Citations
20 Claims
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1. An interconnect structure comprising:
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a patterned dielectric material having at least one opening located therein; a dual material liner located at least on sidewalls of the patterned dielectric material within the at least one opening; a first copper region containing a first impurity level located within a bottom region of said at least one opening; and a second copper region containing a second impurity level located within a top region of said at least one opening and atop the first copper region, wherein said first impurity level of said first copper region is less than the second impurity level of said second copper region. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. An interconnect structure comprising:
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a patterned dielectric material having at least one opening located therein; a first copper region containing a first impurity level located within a bottom region of said at least one opening; and a second copper region containing a second impurity level located within a top region of said at least one opening and atop the first copper region, wherein said first impurity level of said first copper region is less than the second impurity level of said second copper region. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A method of fabricating an interconnect structure comprising:
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forming a patterned dielectric material having at least one opening located therein; forming a dual material liner at least on sidewalls of the patterned dielectric material within the at least one opening; providing a first copper region containing a first impurity level within a bottom region of said at least one opening; and providing a second copper region containing a second impurity level within a top region of said at least one opening and atop the first copper region, wherein said first impurity level of the first copper region is different from the second impurity level of the second copper region. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification