Semiconductor device with wireless communication

• US 8,902,123 B2
• Filed: 12/28/2012
• Issued: 12/02/2014
• Est. Priority Date: 03/26/2007
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Dairiki, Koji, Izumi, Konami
• Primary Examiner(s): Arroyo, Teresa M
• Application Number:
  US13/729,270
• Publication Number:
  US 20130119561A1
• Time in Patent Office: 704 Days
• Field of Search: 257/678, 257/728, 257/786, 257/798, 257/E29.167, 257/E23.01, 257/E23.141, 257/686, 257/723, 257/724, 257/725, 257/777, 343/800, 343/700.MS, 343/895, 343/893
• US Class Current: 343/893
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/68318 Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
• CPC Class Codes: H01L 2221/6835 used as a support during build up manufacturing of active devices
• CPC Class Codes: H01L 2221/68368 used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
• CPC Class Codes: H01L 2223/6677 for antenna, e.g. antenna included within housing of semiconductor device antennas per se H01Q
• CPC Class Codes: H01L 2224/05554 being square
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48157 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2225/06506 Wire or wire-like electrical connections between devices
• CPC Class Codes: H01L 2225/06527 Special adaptation of electrical connections, e.g. rewiring, engineering changes, pressure contacts, layout
• CPC Class Codes: H01L 23/48 Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
• CPC Class Codes: H01L 23/5385 Assembly of a plurality of insulating substrates
• CPC Class Codes: H01L 23/58 Structural electrical arrangements for semiconductor devices not otherwise provided for , e.g. in combination with batteries H01L23/49593, H01L23/49596 take precedence
• CPC Class Codes: H01L 23/645 Inductive arrangements H01L23/647, H01L23/66 take precedence
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 24/32 of an individual layer connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 25/0657 Stacked arrangements of devices
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01002 : Helium [He]
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01018 : Argon [Ar]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01025 : Manganese [Mn]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/0104 : Zirconium [Zr]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01044 : Ruthenium [Ru]
• CPC Class Codes: H01L 2924/01045 : Rhodium [Rh]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01054 : Xenon [Xe]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01076 : Osmium [Os]
• CPC Class Codes: H01L 2924/01077 : Iridium [Ir]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/04941 : TiN
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/07811 : Extrinsic, i.e. with electrical conductive fillers
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/12043 : Photo diode
• CPC Class Codes: H01L 2924/12044 : OLED
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/1461 : MEMS
• CPC Class Codes: H01L 2924/15159 : Side view
• CPC Class Codes: H01L 2924/15788 : Glasses, e.g. amorphous oxides, nitrides or fluorides
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/207 : Diameter ranges
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/3512 : Cracking
• CPC Class Codes: H01Q 1/2283 : mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
• CPC Class Codes: H01Q 13/10 : Resonant slot antennas
• CPC Class Codes: H01Q 23/00 : Antennas with active circuits or circuit elements integrated within them or attached to them
• CPC Class Codes: H01Q 9/0407 : Substantially flat resonant element parallel to ground plane, e.g. patch antenna dipole H01Q9/285; monopole H01Q9/40
• CPC Class Codes: H01Q 9/285 : Planar dipole H01Q9/065 takes precedence; patch antenna H01Q9/0407

Abstract

To provide a semiconductor device in which wireless communication is performed between devices formed over different substrates and connection defects of wirings are reduced. A first device having a first antenna is provided over a first substrate, a second device having a second antenna which can communicate with the first antenna is provided over a second substrate, and the first substrate and the second substrate are bonded to each other to manufacture a semiconductor device. The first substrate and the second substrate are bonded to each other by bonding with a bonding layer interposed therebetween, anodic bonding, or surface activated bonding.

Claims

1. A semiconductor device comprising:

a first element group connected to a first antenna;

a first substrate provided with the first element group;

a second element group connected to a second antenna; and

a second substrate which has a first region and a second region,

wherein the first antenna and the second antenna communicate with each other wirelessly,

wherein one of the first element group and the second element group comprises one selected from the group consisting of a thin film transistor and a field effect transistor,

wherein the other of the first element group and the second element group comprises a MEMS structure,

wherein the first region of the second substrate and the first substrate are directly bonded to each other without any layer interposed therebetween, and

wherein the second region is a depressed portion having a planar bottom surface.

2. A semiconductor device according to claim 1, wherein the first substrate and the second substrate are bonded to each other by anodic bonding or surface activated bonding.

3. A semiconductor device according to claim 1, wherein a surface which is opposite side of a surface on which the first element group is provided and a surface which is opposite side of a surface on which the second element group is provided face each other.

4. A semiconductor device according to claim 1, wherein the MEMS structure is one selected from the group consisting of a transducer and a microactuator.

5. A semiconductor device according to claim 1, wherein each of the first substrate and the second substrate comprises one selected from the group consisting of a single crystal silicon substrate, a silicon compound substrate, a compound semiconductor substrate, an SOI substrate, an alkali-free glass substrate, a soda glass substrate, a quartz substrate, a plastic substrate, and a metal substrate.

6. A semiconductor device comprising:

a first element group connected to a first antenna;

a first substrate provided with the first element group;

a second element group connected to a second antenna; and

a second substrate which has a first region and a second region,

wherein one of the first element group and the second element group comprises one selected from the group consisting of a thin film transistor and a field effect transistor,

wherein the other of the first element group and the second element group comprises a MEMS structure,

wherein the second element group is provided in the second region,

wherein the first antenna and the second antenna communicate with each other wirelessly,

wherein the first region of the second substrate and the first substrate are directly bonded to each other without any layer interposed therebetween,

wherein the second region is a depressed portion having a planar bottom surface, and

wherein a surface on which the first element group is provided and a surface on which the second element group is provided face each other.

7. A semiconductor device according to claim 6, wherein the first substrate and the second substrate are bonded to each other by anodic bonding or surface activated bonding.

8. A semiconductor device according to claim 6, wherein the MEMS structure is one selected from the group consisting of a transducer and a microactuator.

9. A semiconductor device according to claim 6, wherein each of the first substrate and the second substrate comprises one selected from the group consisting of a single crystal silicon substrate, a silicon compound substrate, a compound semiconductor substrate, an SOI substrate, an alkali-free glass substrate, a soda glass substrate, a quartz substrate, a plastic substrate, and a metal substrate.

10. A semiconductor device comprising:

a first element group connected to a first antenna;

a first substrate provided with the first element group;

a second element group connected to a second antenna; and

a second substrate which has a first region and a second region,

wherein one of the first element group and the second element group comprises one selected from the group consisting of a thin film transistor and a field effect transistor,

wherein the other of the first element group and the second element group comprises a MEMS structure,

wherein the second element group is provided in the second region,

wherein the first antenna and the second antenna communicate with each other wirelessly,

wherein the first region of the second substrate and the first substrate are directly bonded to each other without any layer interposed therebetween,

wherein the second region is a depressed portion having a planar bottom surface, and

wherein a surface which is opposite side of a surface on which the first element group is provided and a surface on which the second element group is provided face each other.

11. A semiconductor device according to claim 10, wherein the first substrate and the second substrate are bonded to each other by anodic bonding or surface activated bonding.

12. A semiconductor device according to claim 10, wherein the MEMS structure is one selected from the group consisting of a transducer and a microactuator.

13. A semiconductor device according to claim 10, wherein each of the first substrate and the second substrate comprises one selected from the group consisting of a single crystal silicon substrate, a silicon compound substrate, a compound semiconductor substrate, an SOI substrate, an alkali-free glass substrate, a soda glass substrate, a quartz substrate, a plastic substrate, and a metal substrate.