Wrap around stressor formation
First Claim
1. A method comprising:
- performing selective epitaxial growth (SEG) on one or more of a source or drain defined on a fin extending from a bulk silicon substrate of a FINFET semiconductor device;
with the fin remaining connected to the bulk silicon substrate at an area of a channel connecting the source and drain, separating the fin from the bulk silicon substrate at one or more of the source or drain; and
further performing SEG on one or more of the source or drain to form a wrap around epitaxial growth stressor that stresses the channel connecting the source and drain.
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Accused Products
Abstract
For the formation of a stressor on one or more of a source and drain defined on a fin of FINFET semiconductor structure, a method can be employed including performing selective epitaxial growth (SEG) on one or more of the source and drain defined on the fin, separating the fin from a bulk silicon substrate at one or more of the source and drain, and further performing SEG on one or more of the source and drain to form a wrap around epitaxial growth stressor that stresses a channel connecting the source and drain. The formed stressor can be formed so that the epitaxial growth material defining a wrap around configuration connects to the bulk substrate. The formed stressor can increase mobility in a channel connecting the defined source and drain.
16 Citations
20 Claims
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1. A method comprising:
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performing selective epitaxial growth (SEG) on one or more of a source or drain defined on a fin extending from a bulk silicon substrate of a FINFET semiconductor device; with the fin remaining connected to the bulk silicon substrate at an area of a channel connecting the source and drain, separating the fin from the bulk silicon substrate at one or more of the source or drain; and further performing SEG on one or more of the source or drain to form a wrap around epitaxial growth stressor that stresses the channel connecting the source and drain. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A semiconductor device comprising:
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a bulk silicon substrate; an oxide layer; a fin extending from the bulk silicon substrate, the fin defining a source and drain, and a channel connecting the source and drain; and a wrap around stressor comprising epitaxial growth material formed at an area of the fin defining one or more of the source or drain, the wrap around stressor wrapping 360 degrees around the area of the fin defining one or more of the source or drain. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification