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Wrap around stressor formation

  • US 8,906,768 B2
  • Filed: 03/15/2013
  • Issued: 12/09/2014
  • Est. Priority Date: 03/15/2013
  • Status: Active Grant
First Claim
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1. A method comprising:

  • performing selective epitaxial growth (SEG) on one or more of a source or drain defined on a fin extending from a bulk silicon substrate of a FINFET semiconductor device;

    with the fin remaining connected to the bulk silicon substrate at an area of a channel connecting the source and drain, separating the fin from the bulk silicon substrate at one or more of the source or drain; and

    further performing SEG on one or more of the source or drain to form a wrap around epitaxial growth stressor that stresses the channel connecting the source and drain.

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