Thin-film semiconductor device and method for fabricating thin-film semiconductor device
First Claim
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1. A thin-film semiconductor device, comprising:
- a substrate;
a semiconductor device; and
a capacitor,wherein the semiconductor and the capacitor are above the substrate and apart from each other,the semiconductor device includes;
a first gate electrode comprising a light-transmitting conductive material above the substrate;
a second gate electrode comprising a light-shielding conductive material above the first gate electrode;
a first insulating layer above the second gate electrode;
a semiconductor layer above the first insulating layer;
a second insulating layer above the semiconductor layer; and
a source electrode and a drain electrode that are above the second insulating layer, the capacitor includes;
a first capacitor electrode comprising a light-transmitting conductive material above the substrate;
a dielectric layer comprising a same material as the first insulating layer, above the first capacitor electrode; and
a second capacitor electrode above the dielectric layer, comprising a conductive material same as at least one of the source electrode and the drain electrode, overlapping at least part of the first capacitor electrode in a top view, andthe second gate electrode, the semiconductor layer, and the second insulating layer have outlines that are coincident with one another in a top view.
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Abstract
A thin-film semiconductor device includes a semiconductor device part and a capacitor part. The semiconductor device part includes: a light-transmitting first gate electrode; a light-shielding second gate electrode; a first insulating layer; a semiconductor layer; a second insulating layer; and a source electrode and a drain electrode. The capacitor part includes: a first capacitor electrode made of a light-transmitting conductive material; a dielectric layer; and a second capacitor electrode. The second gate electrode, the semiconductor layer, and the second insulating layer have outlines that are coincident with one another in a top view.
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Citations
12 Claims
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1. A thin-film semiconductor device, comprising:
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a substrate; a semiconductor device; and a capacitor, wherein the semiconductor and the capacitor are above the substrate and apart from each other, the semiconductor device includes; a first gate electrode comprising a light-transmitting conductive material above the substrate; a second gate electrode comprising a light-shielding conductive material above the first gate electrode; a first insulating layer above the second gate electrode; a semiconductor layer above the first insulating layer; a second insulating layer above the semiconductor layer; and a source electrode and a drain electrode that are above the second insulating layer, the capacitor includes; a first capacitor electrode comprising a light-transmitting conductive material above the substrate; a dielectric layer comprising a same material as the first insulating layer, above the first capacitor electrode; and a second capacitor electrode above the dielectric layer, comprising a conductive material same as at least one of the source electrode and the drain electrode, overlapping at least part of the first capacitor electrode in a top view, and the second gate electrode, the semiconductor layer, and the second insulating layer have outlines that are coincident with one another in a top view. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification