Light emitting diode chip having distributed bragg reflector, method of fabricating the same, and light emitting diode package having distributed bragg reflector
First Claim
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1. A light emitting diode chip, comprising:
- a substrate;
a light emitting structure arranged on the substrate, the light emitting structure comprising an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer; and
a distributed Bragg reflector to reflect light emitted from the light emitting structure,wherein the distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range, andwherein the distributed Bragg reflector has a reflectivity of at least 90% for light in a full wavelength range of 400 to 700 nm.
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Abstract
An exemplary embodiment of the present invention discloses a light emitting diode chip including a substrate, a light emitting structure arranged on the substrate, the light emitting structure including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, and a distributed Bragg reflector to reflect light emitted from the light emitting structure. The distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range.
32 Citations
33 Claims
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1. A light emitting diode chip, comprising:
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a substrate; a light emitting structure arranged on the substrate, the light emitting structure comprising an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer; and a distributed Bragg reflector to reflect light emitted from the light emitting structure, wherein the distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range, and wherein the distributed Bragg reflector has a reflectivity of at least 90% for light in a full wavelength range of 400 to 700 nm. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A light emitting diode chip, comprising:
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a substrate comprising a first surface and a second surface; a light emitting structure arranged on the first surface, the light emitting structure comprising an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer; and a distributed Bragg reflector, wherein the second surface is arranged on the distributed Bragg reflector, the distributed Bragg reflector to reflect light emitted from the light emitting structure, wherein the second surface comprises a surface roughness having a root-mean-square (RMS) value of 3 nm or less, wherein the distributed Bragg reflector comprises a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range, and wherein the distributed Bragg reflector has a reflectivity of at least 90% for light in a full wavelength range of 400 to 700 nm. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33)
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Specification