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Method of manufacturing semiconductor device, solid-state imaging device, and solid-state imaging apparatus

  • US 8,907,375 B2
  • Filed: 03/29/2013
  • Issued: 12/09/2014
  • Est. Priority Date: 11/30/2009
  • Status: Active Grant
First Claim
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1. A solid-state imaging device comprising:

  • a photoelectric conversion unit configured to store a signal charge according to incident light; and

    a semiconductor device including an isolation region which is an impurity region of a first conductivity type, a source region and a drain region of a transistor which are impurity regions of a second conductivity type, a gate electrode of the transistor which is provided on an insulator layer on a surface of a semiconductor substrate formed with the isolation region and the source region and the drain region of the transistor, and a lightly doped drain region of the second conductivity type which is provided near the surface of the semiconductor substrate in a region narrower than a width of the gate electrode of the transistor.

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