Systems and methods for control of power semiconductor devices

• US 8,907,716 B2
• Filed: 02/14/2013
• Issued: 12/09/2014
• Est. Priority Date: 12/28/2012
• Status: Active Grant

• Current Assignee: General Electric Company
• Original Assignee: General Electric Company
• Inventors: Zhu, Jun, Wagoner, Robert Gregory, Zhu, Huibin, Wang, Chengjun
• Primary Examiner(s): CHENG, DIANA
• Application Number:
  US13/767,641
• Publication Number:
  US 20140184308A1
• Time in Patent Office: 663 Days
• Field of Search: 327/419, 327/421, 327/427, 327/434, 327/172, 323/311
• US Class Current: 327/419
• CPC Class Codes: H03K 17/08128 in composite switches
• CPC Class Codes: H03K 17/56 by the use, as active elements, of semiconductor devices using diodes H03K17/74

Abstract

A device includes a controller configured to regulate one or more voltages applied to a gate of an insulated gate bipolar transistor (IGBT). The controller is configured to receive one or more voltage values associated with the IGBT, and generate a gating signal and transmit the gating signal to the IGBT. The gating signal is configured to activate or deactivate the IGBT. The controller is configured to generate a voltage clamping signal and transmit the voltage clamping signal to activate or deactivate an active switching device. The active switching device is configured to periodically limit the one or more voltage values associated with the IGBT based at least in part on one or more characteristics of the voltage clamping signal.

Claims

1. A device, comprising:

a controller configured to regulate one or more voltages applied to a gate of an insulated gate bipolar transistor (IGBT) configured to;

generate a gating signal and transmit the gating signal to the IGBT,

wherein the gating signal is configured to activate or deactivate the IGBT; and

generate a voltage clamping signal and transmit the voltage clamping signal to activate or deactivate a transistor, wherein a terminal of the transistor is directly coupled to a gate of the IGBT, and wherein the transistor is configured to periodically limit a peak operational voltage value of the IGBT based at least in part on one or more characteristics of the voltage clamping signal, and wherein the peak operational voltage value is greater than a voltage of the gating signal.

2. The device of claim 1, wherein the controller is configured to limit the peak operational voltage value of the IGBT to a clamping voltage threshold.

3. The device of claim 2, wherein the clamping voltage threshold is less than a maximum voltage rating of the IGBT.

4. The device of claim 1, wherein the controller is configured to generate and transmit logically high portions of the gating signal and generate and transmit logically high portions of the voltage clamping signal at substantially the same point in time.

5. The device of claim 4, wherein the logically high portions of the gating signal return logically low at a first point in time and the logically high portions of the voltage clamping signal return logically low at a second point in time, wherein the second point in time is delayed until after the first point in time.

6. The device of claim 5, wherein the delay of the second point in time is substantially the time taken for the IGBT to completely deactivate, and wherein the one or more voltage values associated with the IGBT is limited to a clamping voltage threshold between the first point in time and the second point in time.

7. The device of claim 5, wherein the delay of the second point in time is approximately 10 microseconds or less.

8. The device of claim 1, wherein the controller is configured to activate the transistor to limit the peak operational voltage value of the IGBT to a clamping voltage threshold, and deactivate the transistor to allow the peak operational voltage value of the IGBT to exceed the clamping voltage threshold.

9. The device of claim 8, wherein the transistor is configured to deactivate in less time than the IGBT is configured to deactivate.

10. The device of claim 8, wherein allowing the peak operational voltage value of the IGBT to exceed the clamping voltage threshold comprises operating the IGBT at a maximum voltage rating for a period of time.

11. The device of claim 10, wherein operating the IGBT at the maximum voltage rating for the period of time comprises increasing the operating margin of the IGBT.

12. A non-transitory computer-readable medium having computer executable code stored thereon, the code comprising instructions to:

generate a gating signal and transmit the gating signal to an insulated gate bipolar transistor (IGBT), wherein the gating signal is configured to activate or deactivate the IGBT; and

generate a voltage clamping signal and transmit the voltage clamping signal to activate or deactivate a transistor, wherein a terminal of the transistor is directly coupled to a gate of the IGBT, and wherein the transistor is configured to periodically limit a peak operational voltage value of the IGBT based at least in part on one or more characteristics of the voltage clamping signal, and wherein the peak operational voltage value is greater than a voltage of the gating signal.

13. The non-transitory computer-readable medium of claim 12, wherein the code comprises instructions to generate and transmit logically high portions of the gating signal and generate and transmit logically high portions of the voltage clamping signal at substantially the same point in time.

14. The non-transitory computer-readable medium of claim 13, wherein the code comprises instructions to return the logically high portions of the gating signal logically low at a first point in time, and return the logically high portions of the voltage clamping signal logically low at a second point in time, wherein the second point in time is delayed until after the first point in time.

15. The non-transitory computer-readable medium of claim 12, wherein the code comprises instructions to activate the transistor to limit the peak operational voltage value of the IGBT to a clamping voltage threshold, and deactivate the transistor to allow the peak operational voltage value of the IGBT to exceed the clamping voltage threshold.

16. The non-transitory computer-readable medium of claim 15, wherein the code comprises instructions to operate the IGBT at a maximum voltage rating for a period of time to increase the operating margin of the IGBT.

17. A device, comprising:

an insulated gate bipolar transistor (IGBT) configured to receive a gating signal as an indication to active or deactivate;

a zener diode configured to activate at a clamping voltage threshold value; and

an active switching device coupled to the IGBT and the zener diode, wherein the active switching device and the zener diode are coupled between a collector portion and a gate portion of the IGBT, and wherein the active switching device is configured to limit one or more voltages associated with the IGBT to the clamping voltage threshold value when activated, and to allow the one or more voltages associated with the IGBT to exceed the clamping voltage threshold value when deactivated.

18. The device of claim 17, wherein the active switching device comprises a transistor configured to deactivate in less time than the IGBT is configured to deactivate.

19. The device of claim 17, wherein the active switching device is configured to limit the one or more voltages associated with the IGBT to the clamping voltage threshold upon detecting a rising edge portion of a received voltage clamping signal, and to allow the one or more voltages associated with the IGBT to exceed the clamping voltage threshold upon detecting a falling edge portion of the received voltage clamping signal.

20. The device of claim 17, wherein the active switching device is configured to allow the one or more voltages associated with the IGBT to exceed the clamping voltage threshold value by deactivating the zener diode.