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Systems and methods for control of power semiconductor devices

  • US 8,907,716 B2
  • Filed: 02/14/2013
  • Issued: 12/09/2014
  • Est. Priority Date: 12/28/2012
  • Status: Active Grant
First Claim
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1. A device, comprising:

  • a controller configured to regulate one or more voltages applied to a gate of an insulated gate bipolar transistor (IGBT) configured to;

    generate a gating signal and transmit the gating signal to the IGBT,wherein the gating signal is configured to activate or deactivate the IGBT; and

    generate a voltage clamping signal and transmit the voltage clamping signal to activate or deactivate a transistor, wherein a terminal of the transistor is directly coupled to a gate of the IGBT, and wherein the transistor is configured to periodically limit a peak operational voltage value of the IGBT based at least in part on one or more characteristics of the voltage clamping signal, and wherein the peak operational voltage value is greater than a voltage of the gating signal.

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