Fabrication of a high fill ratio silicon spatial light modulator
First Claim
1. A method of forming an optical deflection device, the method comprising:
- providing a semiconductor substrate comprising an upper surface and one or more patterned structures on the upper surface, wherein at least one open region is formed between the upper surface and the patterned structures;
forming a planarized material layer overlying the patterned structures and filling the at least one open region; and
forming a mirror plate comprising a silicon material on the planarized material layer at a temperature of less than 300°
C.
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Abstract
A method for forming an optical deflection device includes providing a semiconductor substrate comprising an upper surface region and a plurality of drive devices within one or more portions of the semiconductor substrate. The upper surface region includes one or more patterned structure regions and at least one open region to expose a portion of the upper surface region to form a resulting surface region. The method also includes forming a planarizing material overlying the resulting surface region to fill the at least one open region and cause formation of an upper planarized layer using the fill material. The method further includes forming a thickness of silicon material at a temperature of less than 300° C. to maintain a state of the planarizing material.
10 Citations
23 Claims
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1. A method of forming an optical deflection device, the method comprising:
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providing a semiconductor substrate comprising an upper surface and one or more patterned structures on the upper surface, wherein at least one open region is formed between the upper surface and the patterned structures; forming a planarized material layer overlying the patterned structures and filling the at least one open region; and forming a mirror plate comprising a silicon material on the planarized material layer at a temperature of less than 300°
C. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of forming a planarized layer, the method comprising:
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providing a semiconductor substrate comprising an upper surface and one or more patterned structures on the upper surface, wherein at least one open region is formed between the upper surface and the patterned structures; dispensing a fill material having a fluid characteristic on the substrate to fill the at least one open region and to form an upper planarized layer on the patterned structures. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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Specification