Multi-column addressing mode memory system including an integrated circuit memory device
First Claim
1. An apparatus to interact with a memory integrated circuit characterized by a row decoder cycle time, the apparatus comprising:
- a command interface to convey read commands to the memory integrated circuit; and
a data interface to receive data from the memory integrated circuit via a data interconnect responsive to the read commands;
wherein the apparatus has two operational modes, including a first operational mode in which the apparatus is to issue via the command interface a first read command to access a single column of an open row of the memory integrated circuit during the row decoder cycle time, and a second operational mode in which the apparatus is to issue via the command interface a second read command to access two columns of the open row of the memory integrated circuit within the row decoder cycle time, using respective column addresses that can be selectively offset relative to one another.
1 Assignment
0 Petitions
Accused Products
Abstract
A memory system includes a master device, such as a graphics controller or processor, and an integrated circuit memory device operable in a dual column addressing mode. The integrated circuit memory device includes an interface and column decoder to access a row of storage cells or a page in a memory bank. During a first mode of operation, a first row of storage cells in a first memory bank is accessible in response to a first column address. During a second mode of operation, a first plurality of storage cells in the first row of storage cells is accessible in response to a second column address during a column cycle time interval. A second plurality of storage cells in the first row of storage cells is accessible in response to a third column address during the column cycle time interval. The first and second pluralities of storage cells are concurrently accessible from the interface.
183 Citations
20 Claims
-
1. An apparatus to interact with a memory integrated circuit characterized by a row decoder cycle time, the apparatus comprising:
-
a command interface to convey read commands to the memory integrated circuit; and a data interface to receive data from the memory integrated circuit via a data interconnect responsive to the read commands; wherein the apparatus has two operational modes, including a first operational mode in which the apparatus is to issue via the command interface a first read command to access a single column of an open row of the memory integrated circuit during the row decoder cycle time, and a second operational mode in which the apparatus is to issue via the command interface a second read command to access two columns of the open row of the memory integrated circuit within the row decoder cycle time, using respective column addresses that can be selectively offset relative to one another. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
-
-
12. An apparatus to interact with a memory integrated circuit characterized by a row decoder cycle time, the apparatus comprising:
-
a command interface to convey read commands to the memory integrated circuit; and a data interface to receive data from the memory integrated circuit via a data interconnect responsive to the read commands, the data interconnect characterized by a data width corresponding to a maximum number of bits that can be concurrently received via respective data lines of the data interconnect; wherein the apparatus has two operational modes, including a first operational mode in which the apparatus is to issue via the command interface a first read command to access a single column of an open row of the memory integrated circuit during the row decoder cycle time, and in which the data interface is to receive read data responsive to the first read command at the data width from the data interconnect, and a second operational mode in which the apparatus is to issue via the command interface a second read command to access two columns of the open row of the memory integrated circuit within the row decoder cycle time, using respective column addresses that can be selectively offset relative to one another, and in which the data interface is to receive read data responsive to the second read command at the data width from the data interconnect. - View Dependent Claims (13, 14, 15, 16, 17, 18)
-
-
19. A controller for a memory integrated circuit characterized by a row decoder cycle time, the controller comprising:
-
a command interface; means for issuing read commands to the memory integrated circuit for performance during the row decoder cycle time, including a first read command to access a single column of an open row of the memory integrated circuit during the row decoder cycle time, and a second read command to access two columns of the open row of the memory integrated circuit during the row decoder cycle time, using respective column addresses that can be selectively offset relative to one another; and means for receiving read data from the memory integrated circuit responsive to the first read command and the second read command each at a maximum data width of a data interconnect in terms of bits that can be concurrently received via respective data lines. - View Dependent Claims (20)
-
Specification