Fast photoresist model

• US 8,910,093 B2
• Filed: 09/28/2011
• Issued: 12/09/2014
• Est. Priority Date: 09/29/2010
• Status: Active Grant

• Current Assignee: Nikon Corporation
• Original Assignee: Nikon Corporation
• Inventors: Flagello, Donis G.
• Primary Examiner(s): Whitmore, Stacy
• Application Number:
  US13/200,668
• Publication Number:
  US 20120079436A1
• Time in Patent Office: 1,168 Days
• Field of Search: 716 50- 51, 716/55
• US Class Current: 716/55
• CPC Class Codes: G03F 7/705 Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
• CPC Class Codes: G03F 7/70625 Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness

Abstract

A method of modeling an image intended to reside in a photoresist film on a substrate is provided. A simulated latent acid image of the image is produced, the simulated latent acid image is compressed in a predetermined direction, and developed to a pattern that enables (a) transfer of the pattern to the substrate or (b) further modeling of the pattern for transfer to the substrate.

Claims

1. A method for modeling a pattern intended to reside in a photoresist layer on a substrate, the method comprising:

in a computer process, forming a stimulated latent acid image in the photoresist layer;

reducing dimensions of the simulated latent acid image by one specified dimension to form a simulated latent acid image with reduced dimensions; and

determining the pattern by calculating a time-dependent development rate profile of the simulated latent acid image in the photoresist layer;

wherein the reducing dimensions includes removing dependency of the simulated latent acid image on said one specified dimension by weight-averaging of said simulated latent acid image such that a first portion of the simulated latent image located farther away from a top of the photoresist layer is weighted higher than a second portion of the simulated latent image located closer to said top.

2. A method according to claim 1, further comprising modifying the stimulated latent acid image with reduced dimensions to an inhibitor concentration image associated with insolubility of the photoresist layer.

3. A method according to claim 1, further comprising calculating a post-exposure bake (PEB) simulated latent acid image with reduced dimensions by

a) calculating changes in the simulated latent acid image with reduced dimensions due to first quenching with base initially contained in the photoresist layer, said quenching performed prior to a PEB process;

and

b) modifying an image resulting from said changes by calculating transformations of the photoresist layer during the PEB process based on a convolution.

4. A method according to claim 3, further comprising reshaping said PEB simulated latent acid image with reduced dimensions by calculating second quenching process that follows the PEB process.

5. A method according to claim 1, wherein said determining the pattern includes calculating a time-dependent development rate profile based at least on development rates of fully exposed photoresist and unexposed photoresist and a threshold inhibitor concentration.

6. A method according to claim 1, further comprising determining a geometrical extent of the pattern along the one specified dimension from the development rate profile.

7. A method according to claim 1, wherein the one specified dimension includes a longitudinal dimension corresponding to an optical axis associated with exposure of the photoresist layer, and wherein the weight-averaging of said simulated latent acid image is effectuated according to Ī

_A(x,y)=Σ

_i=0^dW_iI_A(x,y,z)/Σ

_i=1^dW_i, wherein I_A represents the simulated latent acid image, Ī

_A represents a weight-averaged simulated latent acid image with reduced dimensions, and W_i is a weight factor dependent on a distance along the longitudinal dimension, a pivot depth parameter, and a weighting slope parameter.

8. A method according to claim 1, further comprising determining a linewidth parameter associated with the pattern in a plane of the photoresist layer, said linewidth parameter including an experimentally determined correction factor.

9. A method according to claim 1, further comprising calculating the stimulated latent acid image in a computer process based at least on a complex refractive index of the photoresist layer and a photoresist clearing exposure dose.

10. A method according to claim 1, wherein the determining includes determining said pattern by calculating said time-dependent development rate profile, said development rate profile being independent from a parameter representing a distance measured along the one specified dimension.

11. A method for modeling a pattern intended to reside in a photoresist layer on a substrate as a result of a photolithography process, the method comprising:

in a computer process, forming a stimulated latent acid image associated with the photoresist layer;

reducing dimensions of the simulated latent acid image by one dimension to form a simulated latent acid image with reduced dimensions by removing a dependency of said simulated latent acid image on a parameter representing a distance along an optical axis associated with the photolithography process,

wherein the stimulated latent acid image has been calculated based at least on a complex refractive index of the photoresist layer and a photoresist clearing exposure dose;

modifying the stimulated latent acid image with reduced dimensions to an inhibitor concentration image associated with insolubility of the photoresist layer; and

determining the pattern by calculating a time-dependent development rate profile of the simulated latent acid image in the photoresist layer, said development rate profile being independent from said parameter.

12. A method according to claim 11, further comprising reshaping the simulated latent acid image with reduced dimensions in a computer process by at least one of

modeling a first quenching of said image with base initially contained in the photoresist layer prior to a PEB process;

modeling the PEB process; and

modeling a second quenching of said image post-PEB process.

13. A method according to claim 11, wherein said determining the pattern includes calculating a time-dependent development rate profile based at least on a development rate of fully exposed photoresist, a development rate of unexposed photoresist, and on a threshold inhibitor concentration.

14. A method according to claim 11, further comprising determining a geometrical extent of the pattern along said one dimension from the development rate profile.

15. A method according to claim 11, wherein the reducing dimensions includes removing dependency of the simulated latent acid image on said one dimension by weight-averaging of said simulated latent acid image such that a first portion of the simulated latent image located farther away from a top of the photoresist layer is weighted higher than a second portion of the simulated latent image located closer to said top.

16. A method according to claim 15, wherein said one dimension includes a longitudinal dimension corresponding to an optical axis associated with exposure of the photoresist layer, and wherein the weight-averaging of said simulated latent acid image is effectuated according to Ī

_A(x,y)=Σ

_i=0^dW_iI_A(x,y,z)/Σ

_i=1^dW_i, wherein I_A represents the simulated latent acid image, Ī

_A represents a weight-averaged simulated latent acid image with reduced dimensions, and W_i is a weight factor dependent on a distance along the longitudinal dimension, a pivot depth parameter, and a weighting slope parameter.

17. A method according to claim 11, further comprising determining a linewidth parameter associated with the pattern in a plane of the photoresist layer, said linewidth parameter including an experimentally determined correction factor.

18. A method for modeling a pattern intended to reside in a photoresist layer on a substrate, the method comprising:

in a computer process, forming a stimulated latent acid image in the photoresist layer;

reducing dimensions of the simulated latent acid image by one specified dimension to form a simulated latent acid image with reduced dimensions;

modifying the stimulated latent acid image with reduced dimensions to an inhibitor concentration image associated with insolubility of the photoresist layer; and

determining the pattern by calculating a time-dependent development rate profile of the simulated latent acid image in the photoresist layer, said development rate profile being independent from a parameter representing a distance measured along the one specified dimension.

19. A method according to claim 18, wherein said determining the pattern includes calculating a time-dependent development rate profile based at least on a development rate of fully exposed photoresist, a development rate of unexposed photoresist, and a threshold inhibitor concentration.

20. A method for modeling a pattern intended to reside in a photoresist layer on a substrate, the method comprising:

in a computer process, forming a stimulated latent acid image in the photoresist layer;

reducing dimensions of the simulated latent acid image by one specified dimension to form a simulated latent acid image with reduced dimensions;

determining the pattern by calculating a time-dependent development rate profile of the simulated latent acid image in the photoresist layer; and

modifying the stimulated latent acid image with reduced dimensions to an inhibitor concentration image associated with insolubility of the photoresist layer.

21. A method for modeling a pattern intended to reside in a photoresist layer on a substrate, the method comprising:

in a computer process, forming a stimulated latent acid image in the photoresist layer;

reducing dimensions of the simulated latent acid image by one specified dimension to form a simulated latent acid image with reduced dimensions;

determining the pattern by calculating a time-dependent development rate profile of the simulated latent acid image in the photoresist layer;

wherein said determining the pattern includes calculating a time-dependent development rate profile based at least on a development rate of fully exposed photoresist, a development rate of unexposed photoresist, and a threshold inhibitor concentration.

22. A method for modeling a pattern intended to reside in a photoresist layer on a substrate, the method comprising:

in a computer process, forming a stimulated latent acid image in the photoresist layer;

reducing dimensions of the simulated latent acid image by one specified dimension to form a simulated latent acid image with reduced dimensions;

determining the pattern by calculating a time-dependent development rate profile of the simulated latent acid image in the photoresist layer; and

determining a geometrical extent of the pattern along the one specified dimension from the development rate profile.

23. A method for modeling a pattern intended to reside in a photoresist layer on a substrate, the method comprising:

in a computer process, forming a stimulated latent acid image in the photoresist layer;

reducing dimensions of the simulated latent acid image by one specified dimension to form a simulated latent acid image with reduced dimensions;

determining the pattern by calculating a time-dependent development rate profile of the simulated latent acid image in the photoresist layer; and

calculating the stimulated latent acid image in a computer process based at least on a complex refractive index of the photoresist layer and a photoresist clearing exposure dose.

24. A method for modeling a pattern intended to reside in a photoresist layer on a substrate, the method comprising:

in a computer process, forming a stimulated latent acid image in the photoresist layer;

reducing dimensions of the simulated latent acid image by one specified dimension to form a simulated latent acid image with reduced dimensions;

determining the pattern by calculating a time-dependent development rate profile of the simulated latent acid image in the photoresist layer;

wherein the determining includes determining said pattern by calculating said time-dependent development rate profile, said development rate profile being independent from a parameter representing a distance measured along the one specified dimension.