Methods and apparatus for selectively modifying RF current paths in a plasma processing system

• US 8,911,588 B2
• Filed: 03/19/2012
• Issued: 12/16/2014
• Est. Priority Date: 03/19/2012
• Status: Active Grant

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Nam, Sang Ki, Dhindsa, Rajinder, Marakhtanov, Alexei
• Primary Examiner(s): Lund, Jeffrie R
• Assistant Examiner(s): Antolin, Stanislav
• Application Number:
  US13/423,281
• Publication Number:
  US 20130240482A1
• Time in Patent Office: 1,002 Days
• Field of Search: None
• US Class Current: 156/345.28
• CPC Class Codes: C23C 16/4585 Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
• CPC Class Codes: C23C 16/505 using radio frequency discharges
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence
• CPC Class Codes: H01J 2237/327 Arrangements for generating the plasma
• CPC Class Codes: H01J 2237/3343 Problems associated with etching
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32174 Circuits specially adapted for controlling the RF discharge
• CPC Class Codes: H01J 37/32183 Matching circuits
• CPC Class Codes: H01J 37/32697 Electrostatic control
• CPC Class Codes: H01J 37/32715 Workpiece holder
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01J 37/3299 Feedback systems

Abstract

Methods and apparatus for modifying RF current path lengths are disclosed. Apparatus includes a plasma processing system having an RF power supply and a lower electrode having a conductive portion. There is included an insulative component disposed in an RF current path between the RF power supply and the conductive portion. There are included a plurality of RF path modifiers disposed within the insulative component, the plurality of RF path modifiers being disposed at different angular positions relative to a reference angle drawn from a center of the insulative component, whereby at least a first one of the plurality of RF path modifiers is electrically connected to the conductive portion and at least a second one of the plurality of the plurality of RF path modifiers is not electrically connected to the conductive portion.

Claims

1. A plasma processing system having a plasma processing chamber, comprising:

an RF power supply;

a lower electrode having a conductive portion;

an insulative component disposed in an RF current path between said RF power supply and said conductive portion; and

a plurality of RF path modifiers disposed within said insulative component, said plurality of RF path modifiers being disposed at different angular positions relative to a reference angle drawn from a center of said insulative component,

wherein each of the plurality of RF path modifiers is defined by a same structure so that the plurality of RF path modifiers are arranged symmetrically in a circular arrangement under the conductive portion;

whereby at least a first one of said plurality of RF path modifiers is electrically connected to said conductive portion and at least a second one of said plurality of said plurality of RF path modifiers is not electrically connected to said conductive portion, and each of the plurality of RF path modifiers being individually adjustable to define an intentional non-symmetric impedance at different regions around the circular arrangement to compensate for sensed azimuthal non-uniformities in the plasma processing system.

2. The plasma processing system of claim 1 wherein said plurality of RF path modifiers are evenly disposed at regular angular intervals relative to said reference angle.

3. The plasma processing system of claim 1 wherein said plurality of RF path modifiers are implemented using conductive plugs.

4. The plasma processing system of claim 1 wherein said plurality of RF path modifiers are implemented using impedance devices, each of said impedance devices includes at least one of a capacitor and an inductor.

5. The plasma processing system of claim 1 wherein each of said plurality of RF path modifiers is individually selectively connectable to said conductive portion, whereby connecting of each of said plurality of RF path modifiers is performed via electrical control signaling transmitted to said each of said plurality of RF path modifiers.

6. The plasma processing system of claim 5 wherein said connecting of each of said plurality of said plurality of said plurality of RF path modifiers is performed automatically in-situ in response to sensor measurements.

7. The plasma processing system of claim 5 wherein said connecting of each of said plurality of said plurality of said plurality of RF path modifiers is performed automatically in-situ responsive to computer readable instructions from a computer.

8. The plasma processing system of claim 1 wherein said lower electrode is an electrostatic chuck.

9. The plasma processing system of claim 1 wherein said plurality of RF path modifiers are implemented using machine tunable impedance devices, each of said impedance devices includes at least one of a capacitor and an inductor, wherein impedance value of each of said plurality of RF path modifiers is adjustable via at least one electrical control signal.

10. The plasma processing system of claim 9 wherein said at least one electrical control signal is generated using a computer executing computer readable instructions embodied in a non-transitory computer readable medium.

11. The plasma processing system of claim 9 wherein impedance values of said plurality of RF modifiers are adjusted by machine tunable impedance devices in-situ on a wafer-by-wafer basis in response to sensor measurements.

12. The plasma processing system of claim 9 wherein impedance values of said plurality of RF modifiers are automatically tuned by machine tunable impedance devices in-situ at least on a wafer-by-wafer basis during production in response to sensor measurements that indicate manipulation of RF return currents may be needed to address azimuthal non-uniformity issues.

13. The plasma processing system of claim 1 further comprising:

at least one of a chamber wall and a chamber liner;

a plurality of ground straps disposed around a circumference of a chamber surface, said chamber surface being one of said chamber wall and said chamber liner of said plasma processing chamber;

at least a first impedance device coupled to at least a first ground strap of said plurality of ground straps, wherein a second ground strap of said plurality of ground straps is not provided with a second impedance device having the same impedance value as said first impedance device.

14. The plasma processing system of claim 1 further comprising:

at least one of a chamber wall and a chamber liner;

a plurality of ground straps disposed around a circumference of chamber surface, said chamber surface being one of said chamber wall and said chamber liner of said plasma processing chamber; and

at least a first coil magnetically coupled to at least a first ground strap of said plurality of ground straps, wherein a second ground strap of said plurality of ground straps is not provided with a second coil having the same coil current value as said first coil.

15. A plasma processing system having a plasma processing chamber, comprising:

an RF power supply;

a lower electrode having a conductive portion;

an insulative component disposed in an RF current path between said RF power supply and said conductive portion; and

a plurality of RF path modifiers disposed between said RF power supply and said conductive portion, each of said plurality of RF path modifiers being disposed at different angular positions relative to a reference angle drawn from a center of said insulative component;

wherein each of the plurality of RF path modifiers is defined by a same structure so that the plurality of RF path modifiers are arranged symmetrically in a circular arrangement under the conductive portion;

whereby at least a first one of said plurality of RF path modifiers is electrically connected to said conductive portion and at least a second one of said plurality of said plurality of RF path modifiers is not electrically connected to said conductive portion, wherein said plurality of RF path modifiers are implemented using impedance devices, each of said impedance devices being individually adjustable to define an intentional non-symmetric impedance at different regions around the circular arrangement to compensate for sensed azimuthal non-uniformities in the plasma processing system.

16. The plasma processing system of claim 15 wherein said plurality of RF path modifiers are evenly disposed at regular angular intervals relative to said reference angle.

17. The plasma processing system of claim 15 wherein said lower electrode is an electrostatic chuck.

18. The plasma processing system of claim 15 wherein said plurality impedance devices are implemented using machine tunable impedance devices, each of said impedance devices includes at least one of a capacitor and an inductor, wherein impedance value of each of said plurality of RF path modifiers is adjustable via at least one electrical control signal to compensate for the non-uniformities that cause non-symmetry in process results.

19. The plasma processing system of claim 15 wherein impedance values of each of said impedance devices of said plurality of RF modifiers are adjusted by machine tunable impedance devices in-situ on a wafer-by-wafer basis in response to sensor measurements that sense the azimuthal non-uniformities in the plasma processing system.

20. The plasma processing system of claim 15 wherein impedance values of each of said impedance devices of said plurality of RF modifiers are automatically tuned by machine tunable impedance devices in-situ at least on a wafer-by-wafer basis during production in response to sensor measurements that indicate manipulation of RF return currents may be needed to address the azimuthal non-uniformity.