Integrating active matrix inorganic light emitting diodes for display devices
First Claim
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1. A method of forming an active matrix, light emitting diode (LED) array, the method comprising:
- removing, from a base substrate, a layer of inorganic LED material originally grown thereupon; and
bonding the removed layer of inorganic LED material to an active matrix, thin film transistor (TFT) backplane array.
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Abstract
A method of forming an active matrix, light emitting diode (LED) array includes removing, from a base substrate, a layer of inorganic LED material originally grown thereupon; and bonding the removed layer of inorganic LED material to an active matrix, thin film transistor (TFT) backplane array.
57 Citations
20 Claims
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1. A method of forming an active matrix, light emitting diode (LED) array, the method comprising:
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removing, from a base substrate, a layer of inorganic LED material originally grown thereupon; and bonding the removed layer of inorganic LED material to an active matrix, thin film transistor (TFT) backplane array. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of forming a display device, the method comprising:
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growing one or more layers of inorganic light emitting diode (LED) material on a base substrate; separating the one or more layers of the inorganic LED material from the base substrate by a stress-induced spalling technique; and bonding the separated one or more layers of inorganic LED material to an active matrix, thin film transistor (TFT) backplane array, thereby defining an active matrix LED array. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification