Method for manufacture of bright GaN LEDs using a selective removal process

• US 8,912,025 B2
• Filed: 11/23/2011
• Issued: 12/16/2014
• Est. Priority Date: 11/23/2011
• Status: Active Grant

• Current Assignee: Korrus Incorporated (MKD Electric, Inc.)
• Original Assignee: Soraa, Inc.
• Inventors: Felker, Andrew J., Aldaz, Rafael L., Batres, Max
• Primary Examiner(s): CHOI, CALVIN Y
• Application Number:
  US13/304,182
• Publication Number:
  US 20120135553A1
• Time in Patent Office: 1,119 Days
• Field of Search: None
• US Class Current: 438/33
• CPC Class Codes: B23K 2103/172 wherein at least one of the layers is non-metallic
• CPC Class Codes: B23K 26/364 for making a groove or trench, e.g. for scribing a break initiation groove
• CPC Class Codes: B23K 26/40 taking account of the properties of the material involved
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination

Abstract

A method of fabricating LED devices includes using a laser to form trenches between the LEDs and then using a chemical solution to remove slag creating by the laser.

Claims

1. A method of manufacturing high brightness LED devices, the method of manufacturing comprising:

providing a gallium and nitrogen substrate having a surface with a plurality of light emitting diodes;

treating the substrate to form a plurality of trenches among the light emitting diodes, the plurality of trenches extending from the surface toward an opposing surface, by scanning a coherent beam of energy onto the surface wherein the step of treating causes formation of slag along the plurality of trenches; and

subjecting the trenches and the slag to a chemical solution including potassium ferricyanide to substantially remove the slag without substantially changing the trenches,

wherein the temperature of the chemical solution ranges from about 60 to 75 degrees Celsius, and the chemical solution comprises potassium hexacyanoferrate in a range of 30% to 40% by weight, potassium hydroxide in a range of 1% to 5% by weight, and water in a range of 55%-69% by weight.

2. The method of claim 1 wherein the substrate comprises GaN, the slag is formed overlying each of the trenches, and at least some trenches have a protruding portion of slag, the slag having a lower density than a density of the substrate.

3. The method of claim 1 further comprising separating the plurality of light emitting diodes from each other.

4. The method of claim 3 wherein the step of separating comprises breaking the substrate apart using the trenches.

5. The method of claim 4 further comprising;

mounting the substrate to a flexible adhesive material prior to breaking the substrate apart, and

removing the light emitting diodes from the flexible adhesive material after breaking the substrate apart.

6. The method of claim 1 further comprising heating the chemical solution to approximately 65°

C.

7. A method of separating individual semiconductor die having light emitting diodes formed on a surface of a substrate, wherein the substrate comprises gallium nitride, the method comprising:

forming a plurality of trenches in the substrate by scanning the substrate with a coherent beam of energy, the plurality of trenches extending from the surface of the substrate toward an opposing surface, the step of forming the plurality of trenches also forming slag along the plurality of trenches;

subjecting the substrate, including the trenches and the slag, to a chemical solution to selectively remove substantially all of the slag without substantially changing the trenches; and

separating the individual semiconductor die from each other,

wherein the temperature of the chemical solution ranges from about 60 to 75 degrees Celsius, and the chemical solution consists of potassium hexacyanoferrate in a range of 30% to 40% by weight, potassium hydroxide in a range of 1% to 5% by weight and water in a range of 55%-69% by weight.

8. The method as recited in claim 7 further comprising heating the chemical solution to approximately 65°

C.

9. The method as recited in claim 7 further comprising, after the step of forming the plurality of trenches, a step of mounting the substrate on a flexible adhesive layer.

10. A method of manufacturing light emitting diode (LED) devices, the method comprising:

providing a sapphire substrate including a layer of material, the layer containing gallium and nitrogen and having a plurality of LEDs thereon;

forming a plurality of trenches in at least the layer of material by scanning the substrate with a coherent beam of energy, thereby causing ablation of surface regions of the substrate and formation of slag along the plurality of trenches;

subjecting the substrate, including the trenches and the slag, to a chemical solution to selectively remove the slag without substantially changing the trenches; and

separating the plurality of LEDs from each other using the trenches,

wherein the temperature of the chemical solution ranges from about 60 to 75 degrees Celsius, and the chemical solution comprises potassium hexacyanoferrate in a range of 30% to 40% by weight, potassium hydroxide in a range of 1% to 5% by weight and water in a range of 55%-69% by weight.

11. The method as recited in claim 10 wherein:

an adhesive tape is affixed to a bottom surface of the substrate; and

the LEDs are separated from each other by the trenches and then each LED is removed from the tape.

12. The method as recited in claim 10 further comprising heating the chemical solution to above about 65°

C.

13. The method as recited in claim 10 wherein the plurality of trenches are formed using a pulsed laser.