Display device and method of manufacturing the same
First Claim
Patent Images
1. A display device comprising:
- a first substrate;
a gate line disposed on the first substrate and including a gate electrode;
a gate insulating layer disposed on the gate line;
a semiconductor layer disposed on the gate insulating layer;
a data line disposed on the semiconductor layer and including a source electrode;
a drain electrode disposed on the semiconductor layer and facing the source electrode; and
a passivation layer disposed on the data line and the drain electrode,wherein the semiconductor layer comprises an oxide semiconductor including indium, tin, and zinc,wherein an atomic percent of the indium in the oxide semiconductor is equal to or larger than about 10 at % and equal to or smaller than about 90 at %, an atomic percent of the zinc in the oxide semiconductor is equal to or larger than about 5 at % and equal to or smaller than about 60 at %, and an atomic percent of the tin in the oxide semiconductor is equal to or larger than about 5 at % and equal to or smaller than about 45 at %,wherein a minimum etch selective ratio between the oxide semiconductor, and the data line and the drain electrode satisfies;
−
0.22+0.002×
T,where T denotes a thickness of the data line and the drain electrode, andwherein the data line and the drain electrode comprise copper.
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Accused Products
Abstract
A display device according to an exemplary embodiment of the present invention includes a semiconductor layer; a data line disposed on the semiconductor layer, and a source electrode as well as a drain electrode disposed on the semiconductor layer and facing the source electrode. The semiconductor layer is made of an oxide semiconductor including indium, tin, and zinc. An atomic percent of indium in the oxide semiconductor is equal to or larger than about 10 at % and equal to or smaller than about 90 at %, an atomic percent of zinc in the oxide semiconductor is equal to or larger than about 5 at % and equal to or smaller than about 60 at %, and an atomic percent of tin in the oxide semiconductor is equal to or larger than about 5 at % and equal to or smaller than about 45 at %, and the data line and the drain electrode comprise copper.
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Citations
17 Claims
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1. A display device comprising:
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a first substrate; a gate line disposed on the first substrate and including a gate electrode; a gate insulating layer disposed on the gate line; a semiconductor layer disposed on the gate insulating layer; a data line disposed on the semiconductor layer and including a source electrode; a drain electrode disposed on the semiconductor layer and facing the source electrode; and a passivation layer disposed on the data line and the drain electrode, wherein the semiconductor layer comprises an oxide semiconductor including indium, tin, and zinc, wherein an atomic percent of the indium in the oxide semiconductor is equal to or larger than about 10 at % and equal to or smaller than about 90 at %, an atomic percent of the zinc in the oxide semiconductor is equal to or larger than about 5 at % and equal to or smaller than about 60 at %, and an atomic percent of the tin in the oxide semiconductor is equal to or larger than about 5 at % and equal to or smaller than about 45 at %, wherein a minimum etch selective ratio between the oxide semiconductor, and the data line and the drain electrode satisfies;
−
0.22+0.002×
T,where T denotes a thickness of the data line and the drain electrode, and wherein the data line and the drain electrode comprise copper. - View Dependent Claims (2, 3, 4, 5)
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6. A display device comprising:
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a first substrate; a gate line disposed on the first substrate and including a gate electrode; a gate insulating layer disposed on the gate line; a semiconductor layer disposed on the gate insulating layer; a data line disposed on the semiconductor layer and including a source electrode; a drain electrode disposed on the semiconductor layer and facing the source electrode; and a passivation layer disposed on the data line and the drain electrode, wherein the semiconductor layer comprises an oxide semiconductor including indium, tin, and zinc, wherein an atomic percent of the indium in the oxide semiconductor is equal to or larger than about 10 at % and equal to or smaller than about 80 at %, an atomic percent of the zinc in the oxide semiconductor is equal to or larger than about 10 at % and equal to or smaller than about 70 at %, and an atomic percent of the tin in the oxide semiconductor is equal to or larger than about 5 at % and equal to or smaller than about 45 at %, and wherein the data line and the drain electrode include a lower layer and an upper layer comprising molybdenum, and an intermediate layer comprising aluminum, the intermediate layer being disposed between the lower layer and the upper layer. - View Dependent Claims (7, 8, 9, 10)
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11. A method of manufacturing a display device, the method comprising:
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forming a gate line on a first substrate, the gate line including a gate electrode; forming a gate insulating layer on the gate line; forming a semiconductor layer by depositing an oxide semiconductor material including indium, tin, and zinc on the gate insulating layer, and then etching the oxide semiconductor material with a first etchant; forming a data line including a source electrode and a drain electrode facing the source electrode, by forming a metal layer on the semiconductor layer and then etching the metal layer with a second etchant, the metal layer including copper; and forming a passivation layer on the data line and the drain electrode; wherein an atomic percent of the indium in the oxide semiconductor material is equal to or larger than about 10 at % and equal to or smaller than about 90 at %, an atomic percent of the zinc in the oxide semiconductor is equal to or larger than about 5 at % and equal to or smaller than about 60 at %, and an atomic percent of the tin in the oxide semiconductor is equal to or larger than about 5 at % and equal to or smaller than about 45 at %; and wherein a minimum etch selective ratio between the oxide semiconductor material and the metal layer satisfies;
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0.22+0.002×
T,where T denotes a thickness of the metal layer. - View Dependent Claims (12, 13, 14, 15, 16, 17)
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Specification
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Current AssigneeSamsung Display Company Limited (Samsung Electronics Co. Ltd.)
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Original AssigneeSamsung Display Company Limited (Samsung Electronics Co. Ltd.)
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InventorsAhn, Byung Du, Lee, Kyoung Won, Kim, Gun Hee, Choi, Young Joo
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Primary Examiner(s)Such, Matthew W
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Assistant Examiner(s)Harrison, Monica D
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Application NumberUS13/733,820Publication NumberTime in Patent Office712 DaysField of Search257/43, 257/E29.296, 257/E21.411, 438/38US Class Current438/38CPC Class CodesH01L 27/1225 with semiconductor material...H01L 29/7869 having a semiconductor body...H01L 33/44 characterised by the coatin...
