Organoaminosilane precursors and methods for depositing films comprising same
First Claim
1. An organoaminosilane precursor represented by the following formula I:
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Abstract
Described herein are precursors and methods of forming dielectric films. In one aspect, there is provided a silicon precursor having the following formula I:
wherein R1 is independently selected from hydrogen, a linear or branched C1 to C6 alkyl, a linear or branched C2 to C6 alkenyl, a linear or branched C2 to C6 alkynyl, a C1 to C6 alkoxy, a C1 to C6 dialkylamino and an electron withdrawing group and n is a number selected from 0, 1, 2, 3, 4, and 5; and R2 is independently selected from hydrogen, a linear or branched C1 to C6 alkyl, a linear or branched C2 to C6 alkenyl, a linear or branched C2 to C6 alkynyl, a C1 to C6 alkoxy, a C1 to C6 dialkylamino, a C6 to C10 aryl, a linear or branched C1 to C6 fluorinated alkyl, and a C4 to C10 cyclic alkyl group.
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Citations
57 Claims
- 1. An organoaminosilane precursor represented by the following formula I:
- 9. An organoaminosilane precursor represented by the following formula I:
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13. A method for forming a dielectric film on at least one surface of a substrate by a deposition process chosen from a chemical vapor deposition process and an atomic layer deposition process, the method comprising:
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providing the at least one surface of the substrate in a reaction chamber; introducing at least one organoaminosilane precursor having the following formula I in the reactor; - View Dependent Claims (14, 15, 16, 17, 18, 19)
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20. A method of forming a dielectric film via an atomic layer deposition (ALD) process, the method comprising the steps of:
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a. providing a substrate in an ALD reactor; b. providing in the ALD reactor an at least one organoaminosilane precursor having the following formula I; - View Dependent Claims (21, 22, 23, 24, 25, 26)
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27. A method of forming a dielectric film onto at least a surface of a substrate using a plasma enhanced atomic layer deposition (PEALD) process, the method comprising:
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a. providing a substrate in an ALD reactor; b. providing in the ALD reactor an at least one organoaminosilane precursor having the following formula I; - View Dependent Claims (28, 29, 30, 31, 32, 33)
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34. A method for forming a silicon oxide film on a substrate comprising:
reacting an oxidizing agent with a precursor comprising an organoaminosilane represented by the following formula I; - View Dependent Claims (35, 36, 37, 38, 39)
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40. A method for forming a silicon oxide film on a substrate comprising:
forming via vapor deposition of the silicon oxide film on the substrate from a composition comprising at least one organoaminosilane precursor having the following Formula I; - View Dependent Claims (41, 42, 43, 44)
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45. A method for forming a silicon oxide film on a substrate comprising:
introducing an organoaminosilane represented by the following formula I; - View Dependent Claims (50)
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46. A method for forming a silicon oxide film on a substrate wherein the film comprises a thickness, the method comprising:
a. introducing an at least one organoaminosilane represented by the formula I into a deposition chamber; - View Dependent Claims (47, 48, 49, 51, 52, 53)
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54. A vessel which is used to deliver a precursor for the deposition of a silicon-containing film, the vessel comprising:
the precursor represented by the following formula I; - View Dependent Claims (55)
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56. An organoaminosilane precursor for depositing a dielectric film comprising at least one compound selected from the group consisting of:
- phenylmethylaminosilane, phenylethylaminosilane, phenyl-iso-propylaminosilane, phenylallylaminosilane, m-tolylmethylaminosilane, N-silyl-tetrahydroquinoline, N-silyl-3-anilinopropionitrile, N-silyl-N-phenylglycinonitrile, N-silylcarbazole, phenylcyclohexylaminosilane, N-silyl-2-methylindoline, N-silylbenzomorpholine, N-silylindole, N-silyl-2-methylindole, N-silyl-3-methylindole, o-tolylethylaminosilane, p-tolylethylaminosilane, m-tolylethylaminosilane, p-tolylethylaminosilane, o-tolylethylaminosilane, and N-silyl-1,2,3,4-Tetrahydro-2-methylquinoline.
- View Dependent Claims (57)
Specification