Top gate thin-film transistor, display device, and electronic apparatus
First Claim
1. A top gate type thin-film transistor formed on a transparent substrate, comprising:
- a patterned light blocking film,a base layer,a patterned crystalline silicon film,a gate insulating film, anda patterned gate electrode film sequentially laminated on the transparent substrate,wherein the patterned crystalline silicon film comprises;
a channel region overlapping the patterned gate electrode; and
two regions doped with an impurity at low concentration that are in contact with the channel region,wherein the patterned light blocking film is arranged not to overlap the channel region and arranged such that the light blocking film partially overlaps at least any one of the two regions doped with an impurity at low concentration,wherein the patterned light blocking film is arranged such that the light blocking film partially overlaps at least any one of a source region and a drain region,wherein the patterned light blocking film comprises a third region that is not located right below the patterned crystalline silicon film, andwherein the region on the drain side of the light blocking film and the region on the source side of the light blocking film that are divided across the channel region are electrically connected to each other via the third region of the light blocking film.
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Accused Products
Abstract
The present invention provides a thin-film transistor manufactured on a transparent substrate having a structure of a top gate type crystalline silicon thin-film transistor in which a light blocking film, a base layer, a crystalline silicon film, a gate insulating film, and a gate electrode film arranged not to overlap at least a channel region are sequentially formed on the transparent substrate; wherein the channel region having channel length L, LDD regions having LDD length d on both sides of the channel region, a source region, and a drain region are formed in the crystalline silicon film; the light blocking film is divided across the channel region; and interval x between the divided light blocking films is equal to or larger than channel length L and equal to or smaller than a sum of channel length L and a double of LDD length d (L+2d). Thereby, the cost for manufacturing the thin-film transistor is low, and the photo leak current of the thin-film transistor is suppressed.
3 Citations
9 Claims
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1. A top gate type thin-film transistor formed on a transparent substrate, comprising:
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a patterned light blocking film, a base layer, a patterned crystalline silicon film, a gate insulating film, and a patterned gate electrode film sequentially laminated on the transparent substrate, wherein the patterned crystalline silicon film comprises; a channel region overlapping the patterned gate electrode; and two regions doped with an impurity at low concentration that are in contact with the channel region, wherein the patterned light blocking film is arranged not to overlap the channel region and arranged such that the light blocking film partially overlaps at least any one of the two regions doped with an impurity at low concentration, wherein the patterned light blocking film is arranged such that the light blocking film partially overlaps at least any one of a source region and a drain region, wherein the patterned light blocking film comprises a third region that is not located right below the patterned crystalline silicon film, and wherein the region on the drain side of the light blocking film and the region on the source side of the light blocking film that are divided across the channel region are electrically connected to each other via the third region of the light blocking film. - View Dependent Claims (2, 3, 4)
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5. A top gate type thin-film transistor formed on a transparent substrate, comprising:
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a patterned light blocking film, a base layer, a patterned crystalline silicon film, a gate insulating film, and a patterned gate electrode film are sequentially laminated on the transparent substrate, the patterned crystalline silicon film comprises; a channel region overlapping the patterned gate electrode; and two regions doped with an impurity at low concentration that are in contact with the channel region, and the patterned light blocking film is arranged not to overlap the channel region and arranged such that the light blocking film partially overlaps at least any one of the two regions doped with an impurity at low concentration, wherein the patterned light blocking film comprises a third region that is not located right below the patterned crystalline silicon film, and the region on the drain side of the light blocking film and the region on the source side of the light blocking film that are divided across the channel region are electrically connected to each other via the third region of the light blocking film. - View Dependent Claims (6, 7, 8)
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9. A top gate type thin-film transistor formed on a transparent substrate, comprising:
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a patterned light blocking film, a base layer, a patterned crystalline silicon film, a gate insulating film, and a patterned gate electrode film sequentially laminated on the transparent substrate, wherein the patterned crystalline silicon film comprises; a channel region overlapping the patterned gate electrode; and two regions doped with an impurity at low concentration that are in contact with the channel region, wherein the patterned light blocking film is arranged not to overlap the channel region and arranged such that the light blocking film partially overlaps at least any one of the two regions doped with an impurity at low concentration, wherein the patterned light blocking film is arranged such that the light blocking film partially overlaps at least any one of a source region and a drain region, and wherein the patterned light blocking film is electrically isolated from any one of drain bias, source bias, gate bias and ground that are applied for the top gate type thin-film transistor to operate.
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Specification