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High fidelity patterning employing a fluorohydrocarbon-containing polymer

  • US 8,916,054 B2
  • Filed: 10/26/2011
  • Issued: 12/23/2014
  • Est. Priority Date: 10/26/2011
  • Status: Expired due to Fees
First Claim
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1. A method of forming a patterned structure comprising:

  • forming a stack comprising, from bottom to top, a substrate, a hard mask layer that is not carbon-based, a soft mask layer including a carbon-based material, and a photoresist;

    lithographically patterning said photoresist; and

    transferring a pattern in said photoresist into said soft mask layer employing an anisotropic etch, wherein a carbon-rich polymer including carbon and fluorine is formed on sidewalls around an opening of said soft mask layer, wherein an atomic ratio of carbon to fluorine is greater than 1 within said carbon-rich polymer, wherein said anisotropic etch employs a fluorohydrocarbon-containing plasma, and said carbon-rich polymer is generated by interaction of said fluorohydrocarbon-containing plasma with said soft mask layer, and wherein said fluorohydrocarbon-containing includes ions of CxHyFz, wherein x is an integer selected from 3, 4, 5, and 6, y and z are positive integers, and y is greater than z.

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