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Biasing system for a plasma processing apparatus

  • US 8,916,056 B2
  • Filed: 10/11/2012
  • Issued: 12/23/2014
  • Est. Priority Date: 10/11/2012
  • Status: Active Grant
First Claim
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1. A method comprising:

  • inputting a first process gas into a process chamber;

    generating a first plasma from the first process gas;

    attracting ions of the first plasma towards a workpiece by biasing a platen positioned in the process chamber on which the workpiece is disposed with a negatively biased DC signal during a first processing time interval;

    stopping a flow of the first process gas into the process chamber;

    inputting a cleaning gas into the process chamber;

    generating a cleaning plasma from the cleaning gas; and

    accelerating ions of the cleaning plasma towards interior surfaces of the process chamber housing during a cleaning time interval separate from the first processing time interval, by biasing the platen with a positively biased DC signal.

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