Method for fabricating semiconductor light emitting device
First Claim
1. A method for fabricating a semiconductor light emitting device, the method comprising:
- forming a semiconductor light emitting portion including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and a light emitting layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer;
forming a first conductivity-type semiconductor side electrode connected to the first conductivity-type semiconductor layer;
forming a second conductivity-type semiconductor side electrode connected to the second conductivity-type semiconductor layer;
forming an insulator film covering the semiconductor light emitting portion, such that a first portion of the insulator film is surrounded by the second conductivity-type semiconductor side electrode and is separated from the second conductivity-type semiconductor side electrode by a separation area;
forming a first metallization layer made of metal materials or alloy materials in contact with at least the second conductivity-type semiconductor side electrode and the insulator film, wherein the first metallization layer has an area approximately as large as an area of the semiconductor light emitting portion in a plan view of the semiconductor light emitting portion; and
joining the first metallization layer and a second metallization layer formed on a substrate.
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Abstract
A method for fabricating a semiconductor light emitting device is provided. The method includes forming a semiconductor light emitting portion including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and a light emitting layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. The method also includes forming a first conductivity-type semiconductor side electrode connected to the first conductivity-type semiconductor layer; forming a second conductivity-type semiconductor side electrode connected to the second conductivity-type semiconductor layer; and forming an insulator film covering the semiconductor light emitting portion, such that a first portion of the insulator film is surrounded by the second conductivity-type semiconductor side electrode and is separated from the second conductivity-type semiconductor side electrode by a separation area.
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Citations
31 Claims
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1. A method for fabricating a semiconductor light emitting device, the method comprising:
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forming a semiconductor light emitting portion including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and a light emitting layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer; forming a first conductivity-type semiconductor side electrode connected to the first conductivity-type semiconductor layer; forming a second conductivity-type semiconductor side electrode connected to the second conductivity-type semiconductor layer; forming an insulator film covering the semiconductor light emitting portion, such that a first portion of the insulator film is surrounded by the second conductivity-type semiconductor side electrode and is separated from the second conductivity-type semiconductor side electrode by a separation area; forming a first metallization layer made of metal materials or alloy materials in contact with at least the second conductivity-type semiconductor side electrode and the insulator film, wherein the first metallization layer has an area approximately as large as an area of the semiconductor light emitting portion in a plan view of the semiconductor light emitting portion; and joining the first metallization layer and a second metallization layer formed on a substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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26. A method for fabricating a semiconductor light emitting device, the method comprising:
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forming a semiconductor light emitting portion on a first substrate, wherein the semiconductor light emitting portion includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and a light emitting layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer; forming a first conductivity-type semiconductor side electrode connected to the first conductivity-type semiconductor layer; forming a second conductivity-type semiconductor side electrode connected to the second conductivity-type semiconductor layer; forming an insulator film covering the semiconductor light emitting portion, such that a portion of the insulator film is separated from the second conductivity-type semiconductor side electrode by a separation area; and filling the separation area with a first metallization layer made of metal materials or alloy materials in contact with at least the second conductivity-type semiconductor side electrode and the insulator film, wherein the first metallization layer is joined with a second metallization layer formed on a second substrate. - View Dependent Claims (27, 28, 29, 30, 31)
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Specification