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Method for fabricating semiconductor light emitting device

  • US 8,916,401 B2
  • Filed: 02/26/2013
  • Issued: 12/23/2014
  • Est. Priority Date: 07/03/2007
  • Status: Active Grant
First Claim
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1. A method for fabricating a semiconductor light emitting device, the method comprising:

  • forming a semiconductor light emitting portion including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and a light emitting layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer;

    forming a first conductivity-type semiconductor side electrode connected to the first conductivity-type semiconductor layer;

    forming a second conductivity-type semiconductor side electrode connected to the second conductivity-type semiconductor layer;

    forming an insulator film covering the semiconductor light emitting portion, such that a first portion of the insulator film is surrounded by the second conductivity-type semiconductor side electrode and is separated from the second conductivity-type semiconductor side electrode by a separation area;

    forming a first metallization layer made of metal materials or alloy materials in contact with at least the second conductivity-type semiconductor side electrode and the insulator film, wherein the first metallization layer has an area approximately as large as an area of the semiconductor light emitting portion in a plan view of the semiconductor light emitting portion; and

    joining the first metallization layer and a second metallization layer formed on a substrate.

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