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Group III nitride wafer and its production method

  • US 8,921,231 B2
  • Filed: 03/15/2013
  • Issued: 12/30/2014
  • Est. Priority Date: 04/07/2006
  • Status: Active Grant
First Claim
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1. A method of fabricating a group III nitride wafer having a first layer and a second layer, each comprising a damaged or partially damaged layer of group III nitride, and a third layer having highly oriented poly or single crystalline group III nitride, comprising:

  • (a) slicing a wafer from a bulk crystal of a group III nitride ingot mechanically to form the first layer and the second layer;

    (b)before chemically-mechanically polishing the wafer, chemically etching the wafer under conditions that make the surface of the second layer visually distinguishable from the surface of the first layer.

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