Evanescent wave absorption based devices

• US 8,921,794 B2
• Filed: 01/22/2011
• Issued: 12/30/2014
• Est. Priority Date: 01/22/2010
• Status: Expired due to Fees

• Current Assignee: Vrije Universiteit Brussel
• Original Assignee: Vrije Universiteit Brussel
• Inventors: Stiens, Johan, Vandermeiren, Werner, Shkerdin, Gennady, Vounckx, Roger
• Primary Examiner(s): Porta, David
• Assistant Examiner(s): GUNBERG, EDWIN C
• Application Number:
  US13/522,732
• Publication Number:
  US 20120286163A1
• Time in Patent Office: 1,438 Days
• Field of Search: 250/340, 250/458.1
• US Class Current: 250/340
• CPC Class Codes: G02F 1/015 based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction G02F1/03 takes precedence
• CPC Class Codes: G02F 1/0156 using free carrier absorption
• CPC Class Codes: G02F 1/195 by using frustrated reflection digital reflection using controlled total internal reflection G02F1/315

Abstract

A device (100) is described for actively or passively modulating incident radiation, the device comprising at least one diffraction means (10) adapted for evanescent wave excitation upon irradiation with the incident radiation, and an absorption layer (40) adjacent the at least one diffraction means (10) so that the evanescent waves can interact with the absorption layer (40). The absorption layer (40) has alterable absorption properties so as to alter the absorption of the evanescent waves resulting in modulating of the incident radiation. The device (100) may be for actively modulating incident radiation thus being e.g. a modulator for laser radiation. Alternatively, the device may be for passively modulating incident radiation, thus acting as a sensing device for sensing environmental parameters.

Claims

1. A device for actively or passively modulating incident radiation, comprising:

at least one diffraction element configured for evanescent wave excitation upon irradiation with the incident radiation, and

an absorption layer adjacent the at least one diffraction element so that the evanescent waves interact with the absorption layer, the absorption layer having alterable absorption properties so as to alter the absorption of the evanescent waves resulting in modulating of the incident radiation.

2. The device according to claim 1, wherein, upon evanescent wave excitation, element surface plasmon resonance modes are induced along the at least one diffraction element.

3. The device according to claim 1, wherein the device is configured to modulate the incident radiation in reflection, and comprising a reflective layer at a side of the diffraction element opposite the absorption layer.

4. The device according to claim 1, wherein the device is configured to modulate incident polarized laser radiation.

5. The device according to claim 1, wherein the device actively modulates incident radiation, and comprising an alteration device that alters absorption properties of the absorption layer.

6. The device according to claim 5, wherein the alteration device comprises an electrical, optical, acoustical or magnetic stimuli inducing device or a combination thereof.

7. The device according to claim 1, wherein the absorption layer comprises charges, and is integrated in a single or multiple field effect structure and wherein the state of absorption of the absorption layer is changed electrically by depleting the charges or wherein the absorption layer comprises a resonant plasma layer or wherein the absorption layer comprises a single quantum well or a quantum well stack.

8. The device according to claim 1, wherein the state of absorption of the absorption layer is changeable optically by an external excitation source due to electron-hole generation in the conduction and valence band of the absorption layer material, of which the bandgap is smaller than the photon energy of the excitation radiation.

9. The device according to claim 1, wherein the device is configured to detect an environmental change.

10. The device according to claim 9, wherein the state of absorption is directly related to an environmental or industrial process related physical parameter such that the reflected laser radiation is a measure for that parameter under investigation.

11. The device according to claim 1, wherein the structural properties of the components are configured for a given angle of incidence of laser radiation.

12. The device according to claim 1, provided with structure parameters that are configured to modulate a given diffraction order.

13. The device according to claim 1, wherein the diffraction element is a grating with a period slightly smaller than the cut-off period of a given diffraction order.

14. The device according to claim 1, embedded in a laser generating Q-switched laser radiation or embedded in a detection system detecting environmental changes.

15. A method for actively or passively modulating incident radiation, the method comprising:

exciting of evanescent waves by guiding incident radiation through an absorption layer on a diffraction element,

absorbing a fraction of the evanescent field in the absorption layer in the vicinity of the diffraction element depending on the state of absorption of this absorption layer, and

re-radiating a non-absorbed fraction of the evanescent field in the propagating diffraction modes.

16. The method according to claim 15, wherein exciting of evanescent waves is carried out by guiding incident radiation in a direction substantially orthogonally to the diffraction element and the absorption layer.

17. The method according to claim 15, comprising controlling the state of absorption of an electrically controlled absorption layer or controlling the state of absorption of an optically controlled absorption layer.

18. The method according to claim 17, wherein controlling the state of absorption comprises:

applying an electrical field on the absorption layer

depleting, accumulating or inverting the charges of the absorption layer when the absorption layer is an electrically controlled absorption layer or wherein controlling the state of absorption comprises;

directing radiation of the excitation source to the absorption layer

changing the free carrier density in the absorption layer material as function of the excitation source intensity, when the absorption layer is an optically controlled absorption layer.

19. The method according to claim 15, comprising measuring re-radiation of the non-absorbed fraction of the evanescent field to sense the state of absorption of the absorption layer.

20. The method according to claim 15, including controlling the output of a laser which contains a laser resonator and an evanescent wave absorption based modulator, and comprising:

inducing high optical losses in a cavity of the laser by evanescent wave absorption in the modulator such that the laser switches off,

building up the population inversion by laser ionization power during the off-state of the laser

abruptly reducing the optical losses in the laser cavity to a minimum by switching the modulator to its low absorptive state such that the losses in the cavity are compensated for by propagation gain inside the cavity leading to the building up of large pulses.