Semiconductor light-emitting device for producing wavelength-converted light and method for manufacturing the same

• US 8,921,877 B2
• Filed: 08/02/2011
• Issued: 12/30/2014
• Est. Priority Date: 08/02/2010
• Status: Active Grant

• Current Assignee: Stanley Electric Company Limited
• Original Assignee: Stanley Electric Company Limited
• Inventors: Ito, Kosaburo, Seko, Toshihiro, Ueno, Kazuhiko, Suzuki, Naoto
• Primary Examiner(s): Miyoshi, Jesse Y
• Application Number:
  US13/196,868
• Publication Number:
  US 20120025218A1
• Time in Patent Office: 1,246 Days
• Field of Search: 257/98, 257/99, 257/10, 257/E33.056, 257/E33.059
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/73253 Bump and layer connectors
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 33/48 characterised by the semiconductor body packages
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil

Abstract

A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer located on at least one semiconductor light-emitting chip in order to emit various colored lights including white light. The semiconductor light-emitting device can include a base board, the chip mounted on the base board and a transparent plate disposed on the wavelength converting layer including a spacer and a phosphor having a high density. The wavelength converting layer can be formed in a thin uniform thickness between the transparent plate and a top surface of the chip using the spacer so as to extend toward the transparent plate. The semiconductor light-emitting device can be configured to improve light-emitting efficiency of the chip by using the thin wavelength converting layer including the phosphor having a high density, and therefore can emit a wavelength-converted light having a high light-emitting efficiency from a small light-emitting surface.

Claims

1. A semiconductor light-emitting device comprising:

a base board having a mounting surface and a conductor pattern formed on the mounting surface;

a semiconductor light-emitting chip having an end, a chip bottom surface, a top surface and a chip side surface, and including chip electrodes adjacent the chip bottom surface, and the top surface of the semiconductor light-emitting chip including the end of the semiconductor light-emitting chip;

a transparent plate having an end, a plate side surface and a plate bottom surface formed in a substantially planar shape, and located over the top surface of the semiconductor light-emitting chip so that the plate bottom surface of the transparent plate covers the top surface of the semiconductor light-emitting chip, and the plate bottom surface of the transparent plate including the end of the transparent plate, wherein the end of the transparent plate is located at an outer side of the end of the semiconductor light-emitting chip in plan view; and

a wavelength converting layer having a thickness and a layer side surface being disposed between the transparent plate and the semiconductor light-emitting chip, and the wavelength converting layer covering at least a part of the chip side surface of the semiconductor light-emitting chip, the layer side surface of the wavelength converting layer forming a slant surface that extends from the chip side surface of the semiconductor light-emitting chip to the plate side surface of the transparent plate, the wavelength converting layer including at least one phosphor having a phosphor particle size and a particulate spacer having a spacer particle size that is larger than the phosphor particle size of the at least one phosphor, wherein the thickness of the wavelength converting layer is defined between the top surface of the semiconductor light-emitting chip and the plate bottom surface of the transparent plate and is maintained by supporting the plate bottom surface of the transparent plate using the particulate spacer located on the top surface of the semiconductor light-emitting chip; and

;

a reflective material layer covering the slant surface of the wavelength converting layer.

2. The semiconductor light-emitting device according to claim 1, further comprising a plurality of semiconductor light-emitting chips.

3. The semiconductor light-emitting device according to claim 1, wherein the slant surface of the wavelength converting layer is formed in a cup shape so as to enlarge from the chip side surface of the semiconductor light-emitting chip toward the plate side surface of the transparent plate.

4. The semiconductor light-emitting device according to claim 1, further comprising:

a frame located adjacent the mounting surface of the base board so as to surround the semiconductor light-emitting chip and the wavelength converting layer, and wherein the reflective material layer having a reflective side slant surface disposed at least between the frame and both the layer side surface of the wavelength converting layer and the plate side surface of the transparent plate, and the reflective side slant surface contacts with the layer side surface of the wavelength converting layer.

5. The semiconductor light-emitting device according to claim 4, wherein the slant surface of the wavelength converting layer is formed by using a surface tension of an uncured material of the wavelength converting layer.

6. The semiconductor light-emitting device according to claim 1, wherein the particulate spacer includes at least one of an oxide silicon particle and a glass bead, and the particle size of the particulate spacer is 10 to 100 micro meters.

7. A semiconductor light-emitting device comprising:

a base board having a mounting surface and a conductor pattern formed on the mounting surface;

a plurality of semiconductor light-emitting chips each having a chip bottom surface, a top surface and an outer side surface located in an outward direction of each of the semiconductor light-emitting chips, and each of the semiconductor light-emitting chips including chip electrodes adjacent the chip bottom surface, wherein the plurality of semiconductor light-emitting chips are located adjacent each other;

a transparent plate having a plate side surface and a plate bottom surface formed in a substantially planar shape, and located over the top surface of each of the semiconductor light-emitting chips so that the plate bottom surface of the transparent plate covers the top surface of each of the semiconductor light-emitting chips, wherein the plate bottom surface of the transparent plate is larger than a whole of combined top surfaces of the plurality of light-emitting chips; and

a wavelength converting layer having a thickness, a layer side surface and a layer bottom surface facing the mounting surface of the base board, and being disposed between the transparent plate and the semiconductor light-emitting chips, and the wavelength converting layer covering at least a part of the outer side surface of each of the semiconductor light-emitting chips so that the layer side surface of the wavelength converting layer forming a slant surface that extends from the outer side surface of each of the semiconductor light-emitting chips to the plate side surface of the transparent plate, the wavelength converting layer including at least one phosphor having a phosphor particle size and a particulate spacer having a spacer particle size that is larger than the phosphor particle size of the at least one phosphor, wherein the thickness of the wavelength converting layer is defined between the top surface of each of the semiconductor light-emitting chips and the plate bottom surface of the transparent plate and is maintained by supporting the plate bottom surface of the transparent plate using the particulate spacer located on the top surface of each of the semiconductor light-emitting chips; and

;

a reflective material layer covering the slant surface of the wavelength converting layer.

8. The semiconductor light-emitting device according to claim 7, further comprising:

a frame located adjacent the mounting surface of the base board so as to surround the semiconductor light-emitting chips and the wavelength converting layer while facing the outer side surface of the at least one of the semiconductor light-emitting chips, and wherein

the reflective material layer having a reflective side slant surface disposed at least between the frame and both the layer side surface of the wavelength converting layer and the plate side surface of the transparent plate, and the reflective side slant surface contacts with the layer side surface of the wavelength converting layer.

9. A method for manufacturing the semiconductor light-emitting device according to claim 8, comprising:

providing the base board;

connecting each of the chip electrodes of the semiconductor light-emitting chips to a respective portion of the conductor pattern of the base board;

disposing an uncured paste between the plate bottom surface of the transparent plate and the outer side surface of the at least one of the semiconductor light-emitting chips so as to extend from the outer side surface of the at least one of the semiconductor light-emitting chips toward the plate bottom surface of the transparent plate; and

disposing an uncured reflective material at least between the frame and both the layer side surface of the wavelength converting layer and the plate side surface of the transparent plate and between the chip bottom surface of the at least one of the semiconductor light-emitting chips and the mounting surface of the base board.

10. The semiconductor light-emitting device according to claim 7, wherein the particulate spacer includes at least one of an oxide silicon particle and a glass bead, and the spacer particle size of the particulate spacer is 10 to 100 micro meters.

11. The semiconductor light-emitting device according to claim 7, wherein the wavelength converting layer contains the at least one phosphor of at least 50 weight percent.

12. The semiconductor light-emitting device according to claim 7, wherein the plurality of semiconductor light-emitting chips includes a blue light-emitting chip and the at least one phosphor of the wavelength converting layer is selected from the group consisting of a yellow phosphor, and two phosphors including a red phosphor and a green phosphor.

13. The semiconductor light-emitting device according to claim 7, wherein the plurality of semiconductor light-emitting chips includes an ultraviolet light-emitting chip and the at least one phosphor of the wavelength converting layer includes at least one of a red phosphor, a green phosphor, and a blue phosphor.

14. The semiconductor light-emitting device according to claim 7, wherein the layer bottom surface of the wavelength converting layer is formed in a convex shape extending in a direction toward the transparent plate in at least one space between adjacent semiconductor light-emitting chips.

15. The semiconductor light-emitting device according to claim 7, wherein the layer bottom surface of the wavelength converting layer is located at a substantially same level as a level of the chip bottom surface of at least one of the semiconductor light-emitting chips in at least one space between adjacent semiconductor light-emitting chips.

16. A method for manufacturing the semiconductor light-emitting device according to claim 7, comprising:

providing the base board;

connecting each of the chip electrodes of the semiconductor light-emitting chips to a respective portion of the conductor pattern of the base board;

disposing an uncured paste between the plate bottom surface of the transparent plate and the outer side surface of the at least one of the semiconductor light-emitting chips so as to extend from the outer side surface of the at least one of the semiconductor light-emitting chips toward the plate bottom surface of the transparent plate; and

forming the wavelength converting layer having a thickness between the plate bottom surface of the transparent plate and the top surface of the at least one of the semiconductor light-emitting chips by solidifying the uncured paste.

17. The semiconductor light-emitting device according to claim 7, wherein the slant surface of the wavelength converting layer is formed in a cup shape so as to enlarge from the outer side surface of each of the semiconductor light-emitting chips toward the plate side surface of the transparent plate.

18. The semiconductor light-emitting device according to claim 7, wherein the slant surface of the wavelength converting layer is formed by using a surface tension of an uncured material of the wavelength converting layer.

19. The semiconductor light-emitting device according to claim 7, wherein the slant surface of the wavelength converting layer is formed by using a surface tension of an uncured material of the wavelength converting layer.