Semiconductor device and structure
First Claim
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1. An Integrated Circuit device, comprising:
- a base wafer comprising single crystal, said base wafer comprising a plurality of first transistors;
at least one metal layer providing interconnection between said plurality of first transistors;
a second layer comprising a plurality of second transistors, said second layer overlying said at least one metal layer,wherein said second layer comprises a through layer via with a diameter of less than 150 nm, andwherein at least one of said second transistors comprise a back-bias structure.
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Abstract
An Integrated Circuit device, including: a base wafer including single crystal, the base wafer including a plurality of first transistors; at least one metal layer providing interconnection between the plurality of first transistors; a second layer including a plurality of second transistors, the second layer overlying the at least one metal layer; where the second layer includes a through layer via with a diameter of less than 150 nm, and where at least one of the second transistors includes a back-bias structure.
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Citations
20 Claims
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1. An Integrated Circuit device, comprising:
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a base wafer comprising single crystal, said base wafer comprising a plurality of first transistors; at least one metal layer providing interconnection between said plurality of first transistors; a second layer comprising a plurality of second transistors, said second layer overlying said at least one metal layer, wherein said second layer comprises a through layer via with a diameter of less than 150 nm, and wherein at least one of said second transistors comprise a back-bias structure. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. An Integrated Circuit device, comprising:
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a base wafer comprising single crystal, said base wafer comprising a plurality of first transistors; at least one metal layer providing interconnection between said plurality of first transistors; a second layer of less than 2 micron thickness, said second layer comprising a plurality of second transistors, said second layer overlying said at least one metal layer, wherein said second layer comprises a through layer via with a diameter of less than 150 nm; and at least one conductive structure constructed to provide power to a portion of said second transistors, wherein said provide power is controlled by at least one of said second transistors. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. An Integrated Circuit device, comprising:
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a base wafer comprising single crystal, said base wafer comprising a plurality of first transistors; at least one metal layer providing interconnection between said plurality of first transistors; a second layer of less than 2 micron thickness, said second layer comprising a plurality of second transistors, said second layer overlying said at least one metal layer, wherein said plurality of second transistors comprise single crystal, and wherein said second layer comprises a through layer via with a diameter of less than 150 nm; a plurality of conductive pads, wherein at least one of said conductive pads overlays at least one of said second transistors; and at least one I/O circuit, wherein said at least one I/O circuit is adapted to interface with external devices through at least one of said plurality of conductive pads, wherein said at least one I/O circuit comprises at least one of said second transistors. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification