Memory circuit, memory unit, and signal processing circuit
First Claim
1. A memory circuit comprising:
- a transistor;
a capacitor;
a first arithmetic circuit;
a second arithmetic circuit;
a third arithmetic circuit; and
a switch,wherein an output terminal of the first arithmetic circuit is electrically connected to an input terminal of the second arithmetic circuit,wherein an output terminal of the second arithmetic circuit is electrically connected to an input terminal of the first arithmetic circuit,wherein the input terminal of the first arithmetic circuit is electrically connected to one of a source and a drain of the transistor,wherein the other of the source and the drain of the transistor is electrically connected to one of a pair of electrodes of the capacitor and to an input terminal of the third arithmetic circuit,wherein an output terminal of the third arithmetic circuit is electrically connected to the input terminal of the first arithmetic circuit via the switch, andwherein the transistor comprises an oxide semiconductor layer.
1 Assignment
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Accused Products
Abstract
A memory circuit includes a transistor having a channel in an oxide semiconductor layer, a capacitor, a first arithmetic circuit, a second arithmetic circuit, a third arithmetic circuit, and a switch. An output terminal of the first arithmetic circuit is electrically connected to an input terminal of the second arithmetic circuit. The input terminal of the second arithmetic circuit is electrically connected to an output terminal of the third arithmetic circuit via the switch. An output terminal of the second arithmetic circuit is electrically connected to an input terminal of the first arithmetic circuit. An input terminal of the first arithmetic circuit is electrically connected to one of a source and a drain of the transistor. The other of the source and the drain of the transistor is electrically connected to one of a pair of electrodes of the capacitor and to an input terminal of the third arithmetic circuit.
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Citations
14 Claims
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1. A memory circuit comprising:
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a transistor; a capacitor; a first arithmetic circuit; a second arithmetic circuit; a third arithmetic circuit; and a switch, wherein an output terminal of the first arithmetic circuit is electrically connected to an input terminal of the second arithmetic circuit, wherein an output terminal of the second arithmetic circuit is electrically connected to an input terminal of the first arithmetic circuit, wherein the input terminal of the first arithmetic circuit is electrically connected to one of a source and a drain of the transistor, wherein the other of the source and the drain of the transistor is electrically connected to one of a pair of electrodes of the capacitor and to an input terminal of the third arithmetic circuit, wherein an output terminal of the third arithmetic circuit is electrically connected to the input terminal of the first arithmetic circuit via the switch, and wherein the transistor comprises an oxide semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A memory circuit comprising:
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a flip-flop circuit comprising a first node, a second node, a first arithmetic circuit and a second arithmetic circuit; a transistor; a capacitor; a third arithmetic circuit; and a switch, wherein while a supply voltage is supplied, a signal at the second node is an inverted signal of a signal at the first node, wherein one of a source and a drain of the transistor is electrically connected to the first node, wherein the other of the source and the drain of the transistor is electrically connected to one of a pair of electrodes of the capacitor and to an input terminal of the third arithmetic circuit, wherein an output terminal of the third arithmetic circuit is electrically connected to the first node via the switch, and wherein the transistor comprises an oxide semiconductor layer. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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Specification