Plasma processing with enhanced charge neutralization and process control
First Claim
1. A method of plasma processing a substrate, the method comprising:
- providing the substrate proximate a plasma source;
applying to the plasma source a first RF power level during a first period and a second RF power level during a second period, the first and second RF power levels being greater than zero RF power level, wherein the second RF power level is greater than the first RF power level;
generating with the plasma source a first plasma during the first period and a second plasma during the second period;
applying to the substrate a first bias voltage during the first period and a second bias voltage during the second period, wherein the first bias voltage has more negative potential than the second bias voltage; and
applying to the plasma source a third RF power level during a third period, wherein the third RF power level is less than the first RF power level; and
applying to the substrate the second bias voltage during the third period.
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Abstract
Plasma processing with enhanced charge neutralization and process control is disclosed. In accordance with one exemplary embodiment, the plasma processing may be achieved as a method of plasma processing a substrate. The method may comprise providing the substrate proximate a plasma source; applying to the plasma source a first RF power level during a first period and a second RF power level during a second period, the first and second RF power levels being greater than zero RF power level, wherein the second RF power level is greater than the first RF power level; generating with the plasma source a first plasma during the first period and a second plasma during the second period; and applying to the substrate a first bias voltage during the first period and a second bias voltage during the second period, wherein the first voltage has more negative potential than the second voltage.
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Citations
20 Claims
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1. A method of plasma processing a substrate, the method comprising:
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providing the substrate proximate a plasma source; applying to the plasma source a first RF power level during a first period and a second RF power level during a second period, the first and second RF power levels being greater than zero RF power level, wherein the second RF power level is greater than the first RF power level; generating with the plasma source a first plasma during the first period and a second plasma during the second period; applying to the substrate a first bias voltage during the first period and a second bias voltage during the second period, wherein the first bias voltage has more negative potential than the second bias voltage; and applying to the plasma source a third RF power level during a third period, wherein the third RF power level is less than the first RF power level; and applying to the substrate the second bias voltage during the third period. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of plasma processing a substrate, the method comprising:
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applying to a plasma source a first power level during a first period and generating a first plasma containing first ions; applying to the plasma source a second power level during a second period and generating a second plasma containing second ions, the second power level being greater than the first power level; applying to the plasma source a third power level during a third period, the third power level being less than the first power level; applying to the substrate a second bias voltage during the third period directing, during the first period, the first ions from the first plasma toward the substrate and accumulating charges in the substrate; and decreasing, during the second period, the charge accumulated in the substrate. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification