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Method for manufacturing deep-trench super PN junctions

  • US 8,927,386 B2
  • Filed: 05/31/2012
  • Issued: 01/06/2015
  • Est. Priority Date: 06/08/2011
  • Status: Active Grant
First Claim
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1. A method for forming a super PN junction, comprising:

  • a deposition step for forming an epitaxial layer on a substrate;

    a dielectric forming step for forming of a first dielectric layer and a second dielectric layer in sequence on the epitaxial layer;

    a deep trench forming step for forming deep trenches in the epitaxial layer;

    a first filling step before removing the second dielectric layer for completely filling the deep trenches and beyond the second dielectric layer with an epitaxial material;

    a second filling step for forming a surface filling layer with a predetermined thickness by filling an entire surface including the second dielectric layer and the epitaxial material, using a third dielectric, wherein the third dielectric is SOG;

    an etching step for etching back the surface filling layer and the epitaxial material to expose an interface of the first dielectric layer and the epitaxial layer on the substrate; and

    a removing step for removing the first dielectric layer, the second dielectric layer and the surface filling layer to planarize the epitaxial layer.

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