Light-emitting element with multiple light-emitting stacked layers
First Claim
1. A light-emitting device, comprising:
- a carrier;
a first light-emitting element, formed on a first portion of the carrier, comprising;
a first MQW structure configured to emit a first light with a first dominant wavelength;
a second MQW structure configured to emit a second light with a second dominant wavelength on the first MQW structure;
wherein the first MQW structure and the second MQW structure both comprise InxGa1-xP or InxGa1-xAs, wherein 0<
x<
1; and
a second light-emitting element, formed on a second portion of the carrier, comprising a light-emitting stacked layer configured to emit a third light with a third dominant wavelength, wherein the third light is blue,wherein a difference between the first dominant wavelength and the second dominant wavelength is 5 nm to 30 nm.
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Accused Products
Abstract
A light-emitting device includes a carrier; a first light-emitting element formed on a first portion of the carrier, including: a first MQW structure configured to emit a first light with a first dominant wavelength; a second MQW structure configured to emit a second light with a second dominant wavelength on the first MQW structure; wherein the first MQW structure and the second MQW structure both comprise InxGa1-xP or InxGa1-xAs, wherein 0<x<1; and a second light-emitting element, formed on a second portion on of the carrier, including a light-emitting stacked layer configured to emit a third light with a third dominant wavelength, wherein the third light is blue, wherein a difference between the first dominant wavelength and the second dominant wavelength is 5 nm to 30 nm.
15 Citations
19 Claims
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1. A light-emitting device, comprising:
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a carrier; a first light-emitting element, formed on a first portion of the carrier, comprising; a first MQW structure configured to emit a first light with a first dominant wavelength; a second MQW structure configured to emit a second light with a second dominant wavelength on the first MQW structure; wherein the first MQW structure and the second MQW structure both comprise InxGa1-xP or InxGa1-xAs, wherein 0<
x<
1; anda second light-emitting element, formed on a second portion of the carrier, comprising a light-emitting stacked layer configured to emit a third light with a third dominant wavelength, wherein the third light is blue, wherein a difference between the first dominant wavelength and the second dominant wavelength is 5 nm to 30 nm. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification