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Semiconductor light emitting device and method for manufacturing the same

  • US 8,927,961 B2
  • Filed: 08/07/2014
  • Issued: 01/06/2015
  • Est. Priority Date: 10/08/2007
  • Status: Active Grant
First Claim
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1. A semiconductor light emitting device, comprising:

  • a first conductive semiconductor layer including an n-type dopant;

    an active layer disposed on the first conductive semiconductor layer;

    a second conductive semiconductor layer disposed on the active layer;

    a third conductive semiconductor layer disposed between the active layer and the second conductive semiconductor layer;

    a fourth conductive semiconductor layer disposed between the third conductive semiconductor layer and the second conductive semiconductor layer;

    a fifth conductive semiconductor layer disposed between the fourth conductive semiconductor layer and the second conductive semiconductor layer; and

    a sixth conductive semiconductor layer disposed between the fifth conductive semiconductor layer and the second conductive semiconductor layer;

    a first electrode layer electrically connected to the first conductive semiconductor layer; and

    a second electrode layer electrically connected to the second conductive semiconductor layer,wherein the second to sixth conductive semiconductor layers include a p-type dopant,wherein the third to sixth conductive semiconductor layers include an AlGaN-based semiconductor layer,wherein the second conductive semiconductor layer is formed of a different semiconductor from the third to sixth conductive semiconductor layers,wherein the second conductive semiconductor layer includes a GaN-based semiconductor,wherein the sixth conductive semiconductor layer has a thickness of about 5 nm to about 100 nm,wherein the sixth conductive semiconductor layer has the thickness different from a thickness of each of the third and fourth conductive semiconductor layers,wherein the active layer includes plurality of quantum barrier layers and plurality of quantum well layers,wherein a cycle of the quantum barrier layer and the quantum well layer of the active layer includes a cycle of 2 to 10,wherein the plurality of quantum well layers include an InGaN semiconductor, andwherein the plurality of quantum barrier layers includes a GaN-based semiconductor.

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