Oxide semiconductor film, semiconductor device, and manufacturing method of semiconductor device
First Claim
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1. A semiconductor device comprising:
- an oxide semiconductor film including a channel region, a source region, and a drain region;
a gate electrode; and
a gate insulating film between the oxide semiconductor film and the gate electrode,wherein the source region and the drain region include a microvoid,wherein the microvoid includes at least one of nitrogen, hydrogen, and oxygen more than an outside of the microvoid includes.
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Abstract
A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used. In a transistor using an oxide semiconductor film for an active layer, a microvoid is provided in a source region and a drain region adjacent to a channel region. By providing a microvoid in the source region and the drain region formed in an oxide semiconductor film, hydrogen contained in the channel region of an oxide semiconductor film can be captured in the microvoid.
143 Citations
19 Claims
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1. A semiconductor device comprising:
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an oxide semiconductor film including a channel region, a source region, and a drain region; a gate electrode; and a gate insulating film between the oxide semiconductor film and the gate electrode, wherein the source region and the drain region include a microvoid, wherein the microvoid includes at least one of nitrogen, hydrogen, and oxygen more than an outside of the microvoid includes. - View Dependent Claims (2, 3)
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4. A semiconductor device comprising:
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a gate electrode; a gate insulating film covering the gate electrode; a pair of electrodes over the gate insulating film; and an oxide semiconductor film overlapping with the gate electrode with the gate insulating film provided therebetween, being partly in contact with the pair of electrodes, including a channel region, a source region, and a drain region, wherein the source region and the drain region include a microvoid, wherein the microvoid includes at least one of nitrogen, hydrogen, and oxygen more than an outside of the microvoid includes, and wherein densities of the source region and the drain region are lower than a density of the channel region. - View Dependent Claims (5, 6, 7, 8, 9, 10)
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11. A semiconductor device comprising:
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an oxide semiconductor film including a channel region, a source region, and a drain region; a pair of electrodes being partly in contact with the oxide semiconductor film; a gate insulating film over the oxide semiconductor film; and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film provided therebetween, wherein the source region and the drain region include a microvoid, wherein the microvoid includes at least one of nitrogen, hydrogen, and oxygen more than an outside of the microvoid includes, and wherein densities of the source region and the drain region are lower than a density of the channel region. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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Specification