Superjunction structures for power devices

• US 8,928,077 B2
• Filed: 09/19/2008
• Issued: 01/06/2015
• Est. Priority Date: 09/21/2007
• Status: Active Grant

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Fairchild Semiconductor Corporation (ON Semiconductor Corporation)
• Inventors: Yun, Chongman, Jang, Hocheol, Rexer, Christopher L., Reichl, Dwayne S., Yedinak, Joseph A., Lee, JaeGil, Shenoy, Praveen Muraleedharan
• Primary Examiner(s): FERNANDES, ERROL V
• Application Number:
  US12/234,549
• Publication Number:
  US 20090079002A1
• Time in Patent Office: 2,300 Days
• Field of Search: 257/302, 257328-330, 257/341, 257/342, 257/500, 257/339
• US Class Current: 257/339
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/26513 of electrically active species
• CPC Class Codes: H01L 21/30604 Chemical etching
• CPC Class Codes: H01L 29/0615 by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] LDD or drain offset regions H01L29/7833
• CPC Class Codes: H01L 29/0634 Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
• CPC Class Codes: H01L 29/0696 of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
• CPC Class Codes: H01L 29/0878 Impurity concentration or distribution
• CPC Class Codes: H01L 29/1075 of field-effect transistors
• CPC Class Codes: H01L 29/1095 Body region, i.e. base region, of DMOS transistors or IGBTs cell layout H01L29/0696
• CPC Class Codes: H01L 29/404 Multiple field plate structures
• CPC Class Codes: H01L 29/66712 Vertical DMOS transistors, i.e. VDMOS transistors
• CPC Class Codes: H01L 29/7395 Vertical transistors, e.g. vertical IGBT
• CPC Class Codes: H01L 29/7397 and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
• CPC Class Codes: H01L 29/7811 with an edge termination structure guard regions per se H01L29/0619; field plates per se H01L29/402
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

In one general aspect, a power device includes an active region having a plurality of pillars of a first conductivity type alternately arranged with a plurality of pillars of a second conductivity type where the plurality of pillars of the second conductivity type in the active region each have substantially the same width. The power device includes a termination region surrounding at least a portion of the active region and having a plurality of pillars of the first conductivity type alternately arranged with a plurality of pillars of the second conductivity type where the plurality of pillars of the second conductivity type in the active region each have substantially the same width and are smaller than each width of the pillars of the second conductivity type in the termination region. The power device includes a transition region disposed between the active region and the termination region.

Claims

1. A power device, comprising:

an active region having a plurality of pillars of a first conductivity type alternately arranged with a plurality of pillars of a second conductivity type, the plurality of pillars of the second conductivity type in the active region each having substantially the same width;

a termination region surrounding at least a portion of the active region and having a plurality of pillars of the first conductivity type alternately arranged with a plurality of pillars of the second conductivity type, the plurality of pillars of the second conductivity type in the active region each having substantially the same width and being smaller than each width of the pillars of the second conductivity type in the termination region; and

a transition region disposed between the active region and the termination region, the transition region having a plurality of pillars of the first conductivity type alternately arranged with a plurality of pillars of the second conductivity type, the plurality of pillars of the second conductivity type in the transition region each having a width greater than each width of the pillars of the second conductivity type in the termination region, the plurality of pillars of the second conductivity type in the termination region each having substantially the same width.

2. The power device of claim 1, wherein the transition region includes an isolation diffusion electrically coupling at least two of the pillars of the first conductivity type in the transition region to at least one of the pillars of the first conductivity type in the active region,

at least one of the plurality of pillars of the first conductivity type in the termination region has a top portion including a diffusion ring shallower than the isolation diffusion.

3. The power device of claim 1, wherein the active region includes a trench gate structure extending to a predetermined depth within at least one of the plurality of pillars of the second conductivity type in the active region.

4. The power device of claim 1, wherein the plurality of pillars of the second conductivity type in the termination region and the plurality of pillars of the second conductivity type in the active region are defined such that a charge balance condition results in a higher breakdown voltage in the termination region than in the active region.

5. The power device of claim 1, wherein each pillar from the plurality of pillars of the first conductivity type in the active region is stripe-shaped, and each pillar from the plurality of pillars of the first conductivity type in the termination region surrounds the active region in a concentric fashion.

6. The power device of claim 1, further comprising:

an imbalance area at a bottom portion of at least one of the plurality of pillars of the first conductivity type in the active region, the imbalance area extending to a depth below a depth of the at least one of the plurality of pillars of the first conductivity type.

7. The power device of claim 1, wherein the plurality of pillars of the first conductivity type in the active region have substantially the same doping profile as the plurality of pillars of the first conductivity type in the termination region.

8. The power device of claim 1, wherein at least one of the plurality of pillars of the first conductivity type has a bottom portion disposed in a first epitaxial layer and disposed above a second epitaxial layer,

the power device further comprising:

an imbalance area at the bottom portion of the at least one of the plurality of pillars of the first conductivity type.

9. The power device of claim 8, wherein the imbalance area extends to a depth below a depth of the at least one of the plurality of pillars of the first conductivity type.

10. The power device of claim 8, wherein the imbalance area has a width greater than a width of the at least one of the plurality of pillars of the first conductivity type.

11. The power device of claim 1, wherein at least one of the plurality of pillars of the first conductivity type has a first portion disposed in a first epitaxial layer and a second portion disposed in a second epitaxial layer,

the power device further comprising:

an imbalance area at a bottom portion of the at least one of the plurality of pillars of the first conductivity type.

12. The power device of claim 11, wherein the imbalance area is of the second conductivity type.

13. The power device of claim 1, wherein at least one of the plurality of pillars of the first conductivity type in the termination region has a top portion including a diffusion ring shallower than a P-well included in the active region.

14. The power device of claim 1, further comprising:

a diffusion ring coupled to a top portion of each of two of the plurality of pillars of the first conductivity type in the termination region; and

a P-well included in the active region and associated with a planar gate structure, the diffusion ring being shallower than the P-well.

15. A power device, comprising:

an active region having a plurality of pillars of a first conductivity type alternately arranged with a plurality of pillars of a second conductivity type, the plurality of pillars of the first conductivity type in the active region each having substantially the same width;

a termination region surrounding at least a portion of the active region and having a plurality of pillars of the first conductivity type alternately arranged with a plurality of pillars of the second conductivity type, each of the plurality of pillars of the second conductivity type in the termination region having the same width, at least a portion of the plurality of pillars of the second conductivity type in the active region each having a width less than each of the widths of the plurality of pillars of the second conductivity type in the termination region; and

a transition region disposed between the active region and the termination region, the transition region having a plurality of pillars of the first conductivity type alternately arranged with a plurality of pillars of the second conductivity type,

each of the pillars of the second conductivity type in the transition region have the same width, each of the pillars of the second conductivity type in the transition region has a width greater than a width of a pillar from the plurality of pillars of the second conductivity type in the termination region.

16. The power device of claim 15, further comprising:

an imbalance area at a bottom portion of at least one of the plurality of pillars of the first conductivity type in the active region, the imbalance area extending to a depth below a depth of the at least one of the plurality of pillars of the first conductivity type,

at least one of the plurality of pillars of the first conductivity type in the termination region having a top portion including a diffusion ring, the diffusion ring having a depth shallower than a depth of a P-well in an active region and shallower than a depth of an isolation region included in the transition region.

17. The power device of claim 15, further comprising:

a substrate;

a first epitaxial layer;

a second epitaxial layer, the first epitaxial layer being disposed between the substrate and the second epitaxial layer; and

an imbalance area at a bottom portion of the at least one of the plurality of pillars of the first conductivity type.

18. The power device of claim 17, wherein the imbalance area is the second conductivity type.

19. The power device of claim 15, wherein the active region includes a planar gate structure extending over at least one of the plurality of pillars of the second conductivity type in the active region.

20. The power device of claim 15, wherein the active region includes a trench gate structure extending to a predetermined depth within at least one of the plurality of pillars of the second conductivity type in the active region.

21. The power device of claim 15, wherein the transition region includes an isolation diffusion electrically coupling at least two of the pillars of the first conductivity type in the transition region to at least one of the pillars of the first conductivity type in the active region.

22. The power device of claim 15, wherein the transition region includes an isolation diffusion electrically coupling at least two of the pillars of the first conductivity type in the transition region to at least one of the pillars of the first conductivity type in the active region, the isolation diffusion being insulated from a portion of a field plate by a dielectric,

the isolation diffusion has a depth deeper than a depth of a P-well included in the active region, the depth of the P-well is deeper than a depth of a diffusion ring included in the termination region.

23. The power device of claim 15, further comprising:

a field plate having a first portion disposed in the transition region and insulated from at least a portion of the plurality of pillars of the second conductivity type in the transition region by a first dielectric, the field plate having a second portion disposed in the termination region and insulated from at least a portion of the plurality of pillars of the second conductivity type in the termination region by a second dielectric having a thickness greater than a thickness of the first dielectric.

24. A power device, comprising:

an active region having a plurality of pillars of a first conductivity type alternately arranged with a plurality of pillars of a second conductivity type;

a termination region having a plurality of pillars of the first conductivity type alternately arranged with a plurality of pillars of the second conductivity type, the plurality of pillars of the first conductivity type in the termination region have the same width,

the plurality of pillars of the second conductivity type in the active region including a pillar having a width smaller than a width of a pillar from the plurality of pillars of the second conductivity type in the termination region; and

a transition region disposed between the active region and the termination region, the transition region having at least one pillar of the first conductivity type adjacent to at least one pillar of the second conductivity type,

the at least one pillar of the second conductivity type in the transition region has a width greater than the width of the pillar from the plurality of pillars of the second conductivity type in the termination region,

at least one of the plurality of pillars of the first conductivity type in the termination region has a top portion including at least a portion of a diffusion ring, the diffusion ring being shallower than a P-well included in the active region and disposed between a pair of pillars of the second conductivity type in the active region.

25. The power device of claim 24, wherein at least one of the plurality of pillars of the first conductivity type in the active region is in contact with an imbalance area, the imbalance area is a P-type imbalance area or an N-type imbalance area.