MOS device with low injection diode
DCFirst Claim
1. A semiconductor device formed on a semiconductor substrate, comprising:
- a drain;
an epitaxial layer overlaying the drain, wherein a drain region extends into the epitaxial layer; and
an active region comprising;
a body disposed in the epitaxial layer, having a body top and a body bottom;
a source embedded in the body, extending from the body top into the body;
a gate trench extending into the epitaxial layer;
a gate disposed in the gate trench;
an active region contact trench extending through the source and into the body, having a active region contact trench bottom; and
an active region contact electrode disposed within the active region contact trench;
wherein;
a layer of body region separates the active region contact electrode from the epitaxial layer;
a thickness of the layer of body region is measured from the active region contact trench bottom to the body bottom;
a depth of the active region contact trench is measured from a top surface of the semiconductor substrate to the active region contact trench bottom; and
the thickness of the layer of body region is substantially less than the depth of the active region contact trench.
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Abstract
A semiconductor device is formed on a semiconductor substrate. The device includes: a drain; an epitaxial layer overlaying the drain, wherein a drain region extends into the epitaxial layer; and an active region. The active region includes: a body disposed in the epitaxial layer, having a body top surface; a source embedded in the body, extending from the body top surface into the body; a gate trench extending into the epitaxial layer; a gate disposed in the gate trench; an active region contact trench extending through the source and into the body; and an active region contact electrode disposed within the active region contact trench. A layer of body region separates the active region contact electrode from the epitaxial layer, and a low injection diode is formed below a body/drain junction.
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Citations
22 Claims
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1. A semiconductor device formed on a semiconductor substrate, comprising:
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a drain; an epitaxial layer overlaying the drain, wherein a drain region extends into the epitaxial layer; and an active region comprising; a body disposed in the epitaxial layer, having a body top and a body bottom; a source embedded in the body, extending from the body top into the body; a gate trench extending into the epitaxial layer; a gate disposed in the gate trench; an active region contact trench extending through the source and into the body, having a active region contact trench bottom; and an active region contact electrode disposed within the active region contact trench; wherein; a layer of body region separates the active region contact electrode from the epitaxial layer; a thickness of the layer of body region is measured from the active region contact trench bottom to the body bottom; a depth of the active region contact trench is measured from a top surface of the semiconductor substrate to the active region contact trench bottom; and the thickness of the layer of body region is substantially less than the depth of the active region contact trench. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of fabricating a semiconductor device, comprising:
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forming a gate trench in an epitaxial layer overlaying a semiconductor substrate; depositing gate material in the gate trench; forming a body that has a body bottom; forming a source; forming an active region contact trench that extends through the source and into the body, wherein the active region contact trench is separated from the epitaxial layer by a layer of body region, and the active region contact trench has an active region contact trench bottom; and disposing a contact electrode within the active region contact trench; wherein; a thickness of the layer of body region is measured from the active region contact trench bottom to the body bottom; a depth of the active region contact trench is measured from a top surface of the semiconductor substrate to the active region contact trench bottom; and the thickness of the layer of body region is substantially less than the depth of the active region contact trench. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22)
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Specification