Noise decoupling structure with through-substrate vias
First Claim
Patent Images
1. A device comprising:
- a substrate comprising a front surface and a back surface;
an integrated circuit device at the front surface of the substrate;
a metal plate on the back surface of the substrate, wherein the metal plate overlaps substantially an entirety of the integrated circuit device;
a guard ring extending into the substrate and encircling the integrated circuit device, wherein the guard ring is formed of a conductive material;
a through substrate via (TSV) penetrating through the substrate and electrically coupled to the metal plate; and
an additional guard ring encircling the guard ring, the additional guard ring formed of an n-well region in the substrate;
wherein the TSV is laterally between the guard ring and the additional guard ring.
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Abstract
A device includes a substrate having a front surface and a back surface; an integrated circuit device at the front surface of the substrate; and a metal plate on the back surface of the substrate, wherein the metal plate overlaps substantially an entirety of the integrated circuit device. A guard ring extends into the substrate and encircles the integrated circuit device. The guard ring is formed of a conductive material. A through substrate via (TSV) penetrates through the substrate and electrically couples to the metal plate.
57 Citations
20 Claims
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1. A device comprising:
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a substrate comprising a front surface and a back surface; an integrated circuit device at the front surface of the substrate; a metal plate on the back surface of the substrate, wherein the metal plate overlaps substantially an entirety of the integrated circuit device; a guard ring extending into the substrate and encircling the integrated circuit device, wherein the guard ring is formed of a conductive material; a through substrate via (TSV) penetrating through the substrate and electrically coupled to the metal plate; and an additional guard ring encircling the guard ring, the additional guard ring formed of an n-well region in the substrate; wherein the TSV is laterally between the guard ring and the additional guard ring. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A device comprising:
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a semiconductor substrate comprising a front surface and a back surface; an integrated circuit device at the front surface of the substrate; a metal plate on the back surface of the substrate, wherein the metal plate overlaps substantially an entirety of the integrated circuit device; a first guard ring extending into the substrate and encircling the integrated circuit device, wherein the first guard ring is formed of a first well region; a deep well region directly underlying the integrated circuit device and contacting the first guard ring, wherein the first guard ring and the deep well region are of a same conductivity type; a through substrate via (TSV) penetrating through the substrate and the deep well region, and electrically coupled to the metal plate; a second guard ring encircling the first guard ring, the second guard ring formed of an n-well region in the semiconductor substrate; and a second well region directly over the deep well region, wherein the second well region is encircled by, and contacts, the first guard ring, and wherein the second well region and the deep well region are of opposite conductivity types. - View Dependent Claims (12, 13, 14, 15)
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16. A device comprising:
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a p-type semiconductor substrate; a deep n-well region in the semiconductor substrate; a p-well region over and contacting the deep well region; a guard ring formed of an n-well region in the p-type semiconductor substrate and encircling the p-well region, wherein the guard ring extends from a front surface of the p-type semiconductor substrate into the p-type semiconductor substrate, and wherein the guard ring contacts the deep n-well region; a metal plate contacting a back surface of the semiconductor substrate; a through substrate via (TSV) penetrating through the p-type semiconductor substrate and contacting the metal plate; and an additional guard ring formed of an additional n-well region in the semiconductor substrate and encircling the guard ring, the additional guard ring extending from the front surface of the p-type semiconductor substrate into the p-type semiconductor substrate, and wherein the TSV is laterally between the guard ring and the additional guard ring. - View Dependent Claims (17, 18, 19, 20)
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Specification