Interlayer conductor and method for forming
First Claim
1. A 3-D structure, comprising:
- a stack including a plurality of active layers at a corresponding plurality of depths in the stack, including a top active layer, and a plurality of contact landing areas on respective active layers;
a first insulating layer over the top active layer, and having a contact area opening over the plurality of contact landing areas, the contact area opening having a longitudinal dimension and a transverse dimension;
a second insulating layer over the first insulating layer, and filling the contact area opening and having a depth over the first insulating layer;
a plurality of interlayer conductors in the second insulating layer, the interlayer connectors having a first portion within the contact area opening through the first insulating layer and extending to a corresponding one of said contact landing areas, and a second portion in part outside the contact area opening above the first insulating layer,said first portion having a transverse dimension Y1 that is nominally equal to the transverse dimension of the contact area opening, andsaid second portion having a transverse dimension Y2 that is greater than the transverse dimension of the contact area opening.
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Accused Products
Abstract
A 3-D structure includes a stack of active layers at different depths has a plurality of contact landing areas on respective active layers within a contact area opening. A plurality of interlayer conductors, each includes a first portion within a contact area opening extending to a contact landing area, and a second portion in part outside the contact area opening above the top active layer. The first portion has a transverse dimension Y1 that is nominally equal to the transverse dimension of the contact area opening, and the second portion having a transverse dimension Y2 that is greater than the transverse dimension of the contact area opening. The active layers can be bit lines or word lines for a 3-D memory device, or other active layers in integrated circuits.
29 Citations
9 Claims
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1. A 3-D structure, comprising:
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a stack including a plurality of active layers at a corresponding plurality of depths in the stack, including a top active layer, and a plurality of contact landing areas on respective active layers; a first insulating layer over the top active layer, and having a contact area opening over the plurality of contact landing areas, the contact area opening having a longitudinal dimension and a transverse dimension; a second insulating layer over the first insulating layer, and filling the contact area opening and having a depth over the first insulating layer; a plurality of interlayer conductors in the second insulating layer, the interlayer connectors having a first portion within the contact area opening through the first insulating layer and extending to a corresponding one of said contact landing areas, and a second portion in part outside the contact area opening above the first insulating layer, said first portion having a transverse dimension Y1 that is nominally equal to the transverse dimension of the contact area opening, and said second portion having a transverse dimension Y2 that is greater than the transverse dimension of the contact area opening. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification