Methods for depositing silicon carbo-nitride film

• US 8,932,675 B2
• Filed: 09/13/2012
• Issued: 01/13/2015
• Est. Priority Date: 05/16/2005
• Status: Active Grant

• Current Assignee: Versum Materials US Inc.
• Original Assignee: Air Products and Chemicals Incorporated (Linde Plc)
• Inventors: Xiao, Manchao, Hochberg, Arthur Kenneth
• Primary Examiner(s): CHEN, BRET P
• Application Number:
  US13/614,387
• Publication Number:
  US 20130244448A1
• Time in Patent Office: 852 Days
• Field of Search: 427/249.15, 427/255.393, 427/255.394
• US Class Current: 427/249.15
• CPC Class Codes: C07F 7/025 without C-silicon linkages
• CPC Class Codes: C09D 5/00 Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced electrically insulating plastics, resins or waxes H01B3/30; Filling pastes
• CPC Class Codes: C23C 16/36 Carbonitrides
• CPC Class Codes: H01L 21/02167 the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02219 the compound comprising silicon and nitrogen
• CPC Class Codes: H01L 21/02222 the compound being a silazane
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD

Abstract

Classes of liquid aminosilanes have been found which allow for the production of silicon carbo-nitride films of the general formula Si_xC_yN_z. These aminosilanes, in contrast, to some of the precursors employed heretofore, are liquid at room temperature and pressure allowing for convenient handling. In addition, the invention relates to a process for producing such films.

The classes of compounds are generally represented by the formulas:

• and mixtures thereof, wherein R and R¹ in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., alkyl, cycloalkyl with R and R¹ in formula A also being combinable into a cyclic group, and R² representing a single bond, (CH₂)_n, a ring, or SiH₂.

Claims

1. A method of forming via a vapor deposition process a dielectric film having the formula Si_xC_yN_z, the method comprising:

providing a substrate within a vapor deposition chamber;

introducing into the vapor deposition chamber an aminosilane comprising the following formula A;

2. The method of claim 1 wherein the vapor deposition process is at least one selected from chemical vapor deposition, low pressure chemical vapor deposition, plasma enhanced chemical vapor deposition, and atomic layer deposition.

3. The method of claim 2 wherein the vapor deposition process is chemical vapor deposition.

4. The method of claim 2 wherein the vapor deposition process is atomic layer deposition.

5. The method of claim 1 further comprising:

introducing an inert gas into the vapor deposition chamber.

6. The method of claim 1 further comprising:

introducing a precursor selected from the group consisting of bis-tert-butylaminosilane, tris-iso-propylaminosilane, bis-diethylaminosilane, tris-dimethylaminosilane, and bis-iso-propylaminosilane into the vapor deposition chamber.

7. The method of claim 1 wherein a mole ratio of nitrogen source to aminosilane precursor ranges from 0:

1 to 10;

1.

8. The method of claim 7 wherein the mole ratio of nitrogen source to aminosilane precursor ranges from 0:

1 to 4;

1.