Smart integrated semiconductor light emitting system including nitride based light emitting diodes (LED) and application specific integrated circuits (ASIC)

• US 8,933,467 B2
• Filed: 12/02/2011
• Issued: 01/13/2015
• Est. Priority Date: 08/13/2009
• Status: Active Grant

• Current Assignee: Semileds Optoelectronics Company Limited (SemiLEDs Inc)
• Original Assignee: Semileds Optoelectronics Company Limited (SemiLEDs Inc)
• Inventors: Tan, Tien Wei, Liu, Wen-Huang, Chu, Chen-Fu, Chen, Yung Wei, Doan, Trung Tri
• Primary Examiner(s): Tran, Tan N
• Assistant Examiner(s): Wilson, Scott R
• Application Number:
  US13/309,718
• Publication Number:
  US 20120091466A1
• Time in Patent Office: 1,138 Days
• Field of Search: None
• US Class Current: 257/84
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48464 the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 25/167 comprising optoelectronic devices, e.g. LED, photodiodes
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/12032 Schottky diode
• CPC Class Codes: H01L 2924/13033 TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Abstract

A light emitting diode (LED) system includes a substrate, an application specific integrated circuit (ASIC), and at least one light emitting diode (LED) that includes a Group-III nitride based material such as GaN, InGaN, AlGaN, AlInGaN or other (Ga, In or Al) N-based materials. The light emitting diode (LED) system can also include a polymer lens, and a phosphor layer on the lens or light emitting diode (LED) for producing white light. In addition, multiple light emitting diodes (LEDs) can be mounted on the substrate, and can have different colors for smart color control lighting. The substrate and the application specific integrated circuit (ASIC) are configured to provide an integrated LED circuit having smart functionality. In addition, the substrate is configured to compliment and expand the functions of the application specific integrated circuit (ASIC), and can also include built in integrated circuits for performing additional electrical functions.

Claims

1. A light emitting diode (LED) system comprising:

a semiconductor substrate comprising a plurality of external contacts;

one or more application specific integrated circuits (ASIC) comprising at least one semiconductor component integrated in the semiconductor substrate in electrical communication with the external contacts and a die on the semiconductor substrate in electrical communication with the application specific integrated circuits (ASIC); and

at least one light emitting diode (LED) on the semiconductor substrate in electrical communication with the die;

the semiconductor substrate, the external contacts, the application specific integrated circuits (ASIC) and the light emitting diode (LED) configured as an integrated LED circuit,

with the external contacts configured as multi-purpose input-output ports configured to control electrical functions of the application specific integrated circuits (ASIC), the die, and the light emitting diode (LED) including power input, dimming control, current setting, feedback sensing, communication and common ground.

2. The system of claim 1 wherein the semiconductor component comprises an element selected from the group consisting of resistors, diodes, capacitors, gates, metal-oxide field effect transistors (MOSFET) and flip flops.

3. The system of claim 1 wherein the die comprises an application specific integrated circuits (ASIC) die.

4. The system of claim 1 wherein the semiconductor substrate comprises a portion of a semiconductor wafer and the die is mounted to a blank portion of the semiconductor substrate.

5. The system of claim 1 wherein the light emitting diode (LED) comprises a Group-III nitride based material.

6. The system of claim 1 wherein the semiconductor substrate comprises Si.

7. A light emitting diode (LED) system comprising:

a semiconductor substrate comprising at least one integrated semiconductor component and a plurality of external contacts in electrical communication with the semiconductor component;

at least one application specific integrated circuit (ASIC) die on the semiconductor substrate having a plurality of integrated circuits;

at least one light emitting diode (LED) on the semiconductor substrate in electrical communication with the application specific integrated circuit (ASIC) die comprising a Group-III nitride based material;

the semiconductor substrate, the external contacts and the integrated circuits configured to integrate the application specific integrated circuit (ASIC) die and the light emitting diode (LED) into an integrated LED circuit,

with the external contacts configured as multi-purpose input-output ports configured to control electrical functions of the application specific integrated circuit (ASIC) die, the integrated circuits and the light emitting diode (LED) including power input, dimming control, current setting, feedback sensing, communication and common ground.

8. The system of claim 7 wherein the Group-III nitride based material comprises a material selected from the group consisting of GaN, InGaN, AlGaN and AlInGaN.

9. The system of claim 7 wherein the semiconductor substrate comprises Si.

10. The system of claim 7 wherein the light emitting diode (LED) comprises a vertical light emitting diode (VLED) die.

11. The system of claim 7 wherein the light emitting diode (LED) includes a device substrate comprising a material selected from the group consisting of Si, GaAs, SiC, AlN, Al₂O₃, and sapphire.

12. The system of claim 7 wherein the Group-III nitride based material comprises GaN and the device substrate comprises SiC.

13. The system of claim 7 wherein the application specific integrated circuit (ASIC) die comprises a plurality of dice.

14. A light emitting diode (LED) system comprising:

a semiconductor substrate comprising a plurality of integrated semiconductor components and a plurality of external contacts in electrical communication with the semiconductor components configured as terminal contacts for electrically connecting the system to an outside world, the semiconductor components comprising an element selected from the group consisting of resistors, diodes, capacitors, gates, metal-oxide field effect transistors (MOSFET) and flip flops;

an application specific integrated circuit (ASIC) die on the semiconductor substrate having a plurality of input ports in electrical communication with the semiconductor devices and the external contacts, a plurality of integrated circuits in electrical communication with the input ports, and at least one output port in electrical communication with the integrated circuits;

at least one light emitting diode (LED) mounted to the semiconductor substrate in electrical communication with the output port comprising a Group-III nitride based material;

the semiconductor substrate, the external contacts, the semiconductor components on the semiconductor substrate, and the integrated circuits on the application specific integrated circuit (ASIC) die configured to form an integrated LED circuit configured to transmit input from the outside world to the application specific integrated circuit (ASIC) die,

with the external contacts configured as multi-purpose input-output ports configured to control electrical functions of the application specific integrated circuit (ASIC) die, the integrated circuits and the light emitting diode (LED) including power input, dimming control, current setting, feedback sensing, communication and common ground.

15. The system of claim 14 wherein the Group-III nitride based material comprises a material selected from the group consisting of GaN, InGaN, AlGaN and AlInGaN.

16. The system of claim 14 wherein the light emitting diode (LED) comprises a vertical light emitting diode (VLED) die.

17. The system of claim 14 wherein the light emitting diode (LED) includes a device substrate comprising a material selected from the group consisting of Si, GaAs, SiC, AlN, Al₂O₃, and sapphire.

18. The system of claim 14 wherein the application specific integrated circuit (ASIC) die comprises a plurality of dice.