Semiconductor device and method for manufacturing the semiconductor device
First Claim
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1. A method for manufacturing a semiconductor device comprising the steps of:
- forming an oxide semiconductor layer having an amorphous structure over a substrate having an insulating surface;
forming an inorganic insulating film including silicon oxide on the oxide semiconductor layer, wherein a substrate temperature is less than or equal to 300°
C.; and
performing heat treatment at 300°
C. or higher after the inorganic insulating film including silicon oxide is formed,wherein the oxide semiconductor layer is not heated at 300°
C. or higher during a period after the formation of the oxide semiconductor layer and before the formation of the inorganic insulating film.
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Abstract
If an oxide semiconductor layer is crystallized by heat treatment without being covered with an inorganic insulating film, surface unevenness and the like are formed due to the crystallization, which may cause variation in electrical characteristics. Steps are performed in the following order: a second insulating film is formed on an oxide semiconductor layer over a substrate and then heat treatment is performed, instead of performing heat treatment during a period immediately after formation of the oxide semiconductor layer and immediately before formation of an inorganic insulating film including silicon oxide on the oxide semiconductor layer. The density of hydrogen included in the inorganic insulating film including silicon oxide is 5×1020/cm3 or more, and the density of nitrogen is 1×1019/cm3 or more.
180 Citations
39 Claims
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1. A method for manufacturing a semiconductor device comprising the steps of:
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forming an oxide semiconductor layer having an amorphous structure over a substrate having an insulating surface; forming an inorganic insulating film including silicon oxide on the oxide semiconductor layer, wherein a substrate temperature is less than or equal to 300°
C.; andperforming heat treatment at 300°
C. or higher after the inorganic insulating film including silicon oxide is formed,wherein the oxide semiconductor layer is not heated at 300°
C. or higher during a period after the formation of the oxide semiconductor layer and before the formation of the inorganic insulating film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method for manufacturing a semiconductor device comprising the steps of:
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forming a gate electrode over a substrate having an insulating surface; forming a gate insulating layer over the gate electrode; forming an oxide semiconductor layer having a first amorphous structure over the gate insulating layer; forming a source electrode and a drain electrode over the oxide semiconductor layer; forming an inorganic insulating film including silicon oxide on the oxide semiconductor layer, wherein a substrate temperature is less than or equal to 300°
C.; andperforming heat treatment at 300°
C. or higher and lower than or equal to a strain point of the substrate after the inorganic insulating film is formed,wherein the oxide semiconductor layer is not heated at 300°
C. or higher during a period after the formation of the oxide semiconductor layer and before the formation of the inorganic insulating film. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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27. A method for manufacturing a semiconductor device comprising the steps of:
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forming an oxide semiconductor layer having a first amorphous structure over a substrate having an insulating surface; forming a source electrode and a drain electrode over the oxide semiconductor layer; forming an inorganic insulating film including silicon oxide on the oxide semiconductor layer, wherein a substrate temperature is less than or equal to 300°
C.; andperforming heat treatment at greater than or equal to 300°
C. and less than or equal to a strain point of the substrate after the inorganic insulating film is formed,wherein the oxide semiconductor layer is not heated at 300°
C. or higher during a period after the formation of the oxide semiconductor layer and before the formation of the inorganic insulating film. - View Dependent Claims (28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39)
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsOhara, Hiroki, Sasaki, Toshinari
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Primary Examiner(s)Patel, Reema
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Application NumberUS12/720,092Publication NumberTime in Patent Office1,778 DaysField of Search438/85, 438/104, 438/795, 438/796, 257/E21.471, 257/E21.475US Class Current438/85CPC Class CodesH01L 21/02554 OxidesH01L 21/02565 Oxide semiconducting materi...H01L 21/02592 amorphousH01L 21/02631 Physical deposition at redu...H01L 21/02667 Crystallisation or recrysta...H01L 27/1225 with semiconductor material...H01L 29/7869 having a semiconductor body...
