Sputtering target and manufacturing method thereof, and transistor
First Claim
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1. A manufacturing method of a sputtering target, comprising:
- mixing and baking a plurality of metal oxides to form a sintered body;
performing a mechanical processing on the sintered body so as to form a target;
cleaning the target; and
performing a heat treatment on the cleaned target.
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Abstract
One object is to provide a deposition technique for forming an oxide semiconductor film. By forming an oxide semiconductor film using a sputtering target including a sintered body of a metal oxide whose concentration of hydrogen contained is low, for example, lower than 1×1016 atoms/cm3, the oxide semiconductor film contains a small amount of impurities such as a compound containing hydrogen typified by H2O or a hydrogen atom. In addition, this oxide semiconductor film is used as an active layer of a transistor.
143 Citations
16 Claims
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1. A manufacturing method of a sputtering target, comprising:
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mixing and baking a plurality of metal oxides to form a sintered body; performing a mechanical processing on the sintered body so as to form a target; cleaning the target; and performing a heat treatment on the cleaned target. - View Dependent Claims (2, 3, 4, 5, 6, 13, 15)
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7. A manufacturing method of a sputtering target, comprising:
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mixing and baking a plurality of metal oxides to form a sintered body; performing a mechanical processing on the sintered body so as to form a target; cleaning the target; performing a heat treatment on the cleaned target; and attaching the target to a backing plate. - View Dependent Claims (8, 9, 10, 11, 12, 14, 16)
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Specification