Nanowire sized opto-electronic structure and method for manufacturing the same
First Claim
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1. A method of manufacturing an opto-electronic structure, comprising:
- providing a support layer;
providing a plurality of nano elements arranged side by side on the support layer, wherein each nano element comprises at least a first conductivity type semiconductor nano sized core, wherein the core and a second conductivity type semiconductor form a pn or pin junction;
providing a sacrificial layer with a first thickness over a first portion of the plurality of nano elements and a second thickness over a second portion of the plurality of nano elements, wherein the first thickness is different from the second thickness;
providing a first electrode layer that extends over the plurality of nano elements and is in electrical contact with at least a portion of the second conductivity type semiconductor; and
providing a mirror on a second conductivity type semiconductor side of the structure.
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Abstract
An opto-electric structure includes a plurality of nano elements arranged side by side on a support layer, where each nano element includes at least a first conductivity type semiconductor nano sized core, and where the core and a second conductivity type semiconductor form a pn or pin junction. A first electrode layer that extends over the plurality of nano elements and is in electrical contact with at least a portion of the second conductivity type semiconductor, and a mirror provided on a second conductivity type semiconductor side of the structure.
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Citations
18 Claims
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1. A method of manufacturing an opto-electronic structure, comprising:
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providing a support layer; providing a plurality of nano elements arranged side by side on the support layer, wherein each nano element comprises at least a first conductivity type semiconductor nano sized core, wherein the core and a second conductivity type semiconductor form a pn or pin junction; providing a sacrificial layer with a first thickness over a first portion of the plurality of nano elements and a second thickness over a second portion of the plurality of nano elements, wherein the first thickness is different from the second thickness; providing a first electrode layer that extends over the plurality of nano elements and is in electrical contact with at least a portion of the second conductivity type semiconductor; and providing a mirror on a second conductivity type semiconductor side of the structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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Specification