Photocurable polymeric dielectrics containing 6-substituted coumarin moieties and methods of preparation and use thereof
First Claim
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1. A thin film transistor device, comprising:
- a dielectric layer;
a semiconductor layer;
a gate electrode;
a source electrode; and
a drain electrode;
wherein the dielectric layer is disposed between the semiconductor layer and the gate electrode;
wherein the source electrode and the drain electrode are in contact with the semiconductor layer,wherein the dielectric layer comprises a polymeric film, the polymeric film comprising a polymer comprising a repeating unit having a pendant group comprising an optionally substituted coumarin-6-yl moiety, wherein the optionally substituted coumarin-6-yl moiety has a formula;
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Abstract
Disclosed are polymer-based dielectric compositions (e.g., formulations) and materials (e.g. films) and associated devices. The polymers generally include photocrosslinkable pendant groups; for example, the polymers can include one or more coumarin-containing pendant groups.
25 Citations
11 Claims
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1. A thin film transistor device, comprising:
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a dielectric layer; a semiconductor layer; a gate electrode; a source electrode; and a drain electrode; wherein the dielectric layer is disposed between the semiconductor layer and the gate electrode; wherein the source electrode and the drain electrode are in contact with the semiconductor layer, wherein the dielectric layer comprises a polymeric film, the polymeric film comprising a polymer comprising a repeating unit having a pendant group comprising an optionally substituted coumarin-6-yl moiety, wherein the optionally substituted coumarin-6-yl moiety has a formula; - View Dependent Claims (2, 3, 4, 5, 6)
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7. A thin film transistor device, comprising:
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a dielectric layer; a semiconductor layer; a gate electrode; a source electrode; and a drain electrode; wherein the dielectric layer is disposed between the semiconductor layer and the gate electrode; wherein the source electrode and the drain electrode are in contact with the semiconductor layer, wherein the dielectric layer comprises a polymeric film, the polymeric film comprising a polymer comprising a repeating unit having a pendant group comprising an optionally substituted coumarin-6-yl moiety, and wherein the polymer is selected from the group consisting of a vinyl polymer, a siloxane polymer, polymaleimide, polyethylene amine, and at least one copolymer thereof, and comprises a repeating unit having a pendant group comprising an optionally substituted coumarin-6-yl moiety. - View Dependent Claims (8, 9)
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10. A thin film transistor device, comprising:
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a dielectric layer; a semiconductor layer; a gate electrode; a source electrode; and a drain electrode; wherein the dielectric layer is disposed between the semiconductor layer and the gate electrode; wherein the source electrode and the drain electrode are in contact with the semiconductor layer, wherein the dielectric layer comprises a polymeric film, the polymeric film comprising a polymer comprising a repeating unit having a pendant group comprising an optionally substituted coumarin-6-yl moiety, and wherein the polymer has at least one selected from the group consisting of; a dielectric constant between about 1.1 and about 5.0; a glass transition temperature (Tg) between about 100°
C. and about 200°
C.;a solubility of greater than about 0.1 mg/mL in a solvent selected from the group consisting of anisole, xylene, cyclopentanone, cyclohexane and cyclohexanone; a maximum absorbance wavelength in the range of about 250 nm and about 500 nm; and a molecular weight between about 10,000 Da and about 100,000 Da. - View Dependent Claims (11)
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Specification