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Photocurable polymeric dielectrics containing 6-substituted coumarin moieties and methods of preparation and use thereof

  • US 8,937,301 B2
  • Filed: 11/20/2009
  • Issued: 01/20/2015
  • Est. Priority Date: 11/24/2008
  • Status: Active Grant
First Claim
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1. A thin film transistor device, comprising:

  • a dielectric layer;

    a semiconductor layer;

    a gate electrode;

    a source electrode; and

    a drain electrode;

    wherein the dielectric layer is disposed between the semiconductor layer and the gate electrode;

    wherein the source electrode and the drain electrode are in contact with the semiconductor layer,wherein the dielectric layer comprises a polymeric film, the polymeric film comprising a polymer comprising a repeating unit having a pendant group comprising an optionally substituted coumarin-6-yl moiety, wherein the optionally substituted coumarin-6-yl moiety has a formula;

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