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Method and system for co-packaging gallium nitride electronics

  • US 8,937,317 B2
  • Filed: 12/28/2012
  • Issued: 01/20/2015
  • Est. Priority Date: 12/28/2012
  • Status: Active Grant
First Claim
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1. An electronic package comprising:

  • a leadframe;

    a plurality of pins;

    a gallium nitride (GaN) transistor comprising a drain region, a drift region, a source region, and a gate region, wherein;

    the drain region comprises a GaN substrate and a drain contact;

    the drift region comprises a first GaN epitaxial layer coupled to the GaN substrate;

    the source region is separated from the GaN substrate by the drift region and comprises a source contact;

    the gate region comprises a second GaN epitaxial layer coupled to the first GaN epitaxial layer and a gate contact;

    a GaN diode comprising an anode region and a cathode region, wherein;

    the cathode region comprises the GaN substrate and a cathode contact; and

    the anode region comprises a third GaN epitaxial layer coupled to the GaN substrate and an anode contact;

    wherein the drain contact and the anode contact are electrically connected to the leadframe.

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