Striped on-chip inductor
First Claim
1. A sub-100 nanometer process semiconductor inductor comprising a plurality of spaced parallel metal lines disposed on a dielectric surface and connecting a first inductor port to a second inductor port;
- the lines each having a width and a cross-sectional area, each line spaced from an adjacent line by a spacing gap;
wherein the plurality of line widths, cross-sectional areas and spacing gaps are a function of Design Rule Check rules comprising a Chemical Mechanical Planarization metal ratio rule, and the plurality of line widths, cross-sectional areas and spacing gaps formed to comply with the Chemical Mechanical Planarization metal ratio rule; and
wherein each of the lines have interior sidewalls in gap regions, the interior sidewalls each having interior sidewall heights, and wherein a sum of the spacing gaps is less than a sum of the interior sidewall heights.
6 Assignments
0 Petitions
Accused Products
Abstract
Sub-100 nanometer semiconductor devices and methods and program products for manufacturing devices are provided, in particular inductors comprising a plurality of spaced parallel metal lines disposed on a dielectric surface and each having width, heights, spacing and cross-sectional areas determined as a function of Design Rule Check rules. For one planarization process rule a metal density ratio of 80% metal to 20% dielectric surface is determined and produced. In one example a sum of metal line spacing gaps is less than a sum of metal line interior sidewall heights. In one aspect at least one of line height, width and line spacing dimensions is selected to optimize one or more chip yield, chip performance, chip manufacturability and inductor Q factor parameters.
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Citations
7 Claims
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1. A sub-100 nanometer process semiconductor inductor comprising a plurality of spaced parallel metal lines disposed on a dielectric surface and connecting a first inductor port to a second inductor port;
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the lines each having a width and a cross-sectional area, each line spaced from an adjacent line by a spacing gap; wherein the plurality of line widths, cross-sectional areas and spacing gaps are a function of Design Rule Check rules comprising a Chemical Mechanical Planarization metal ratio rule, and the plurality of line widths, cross-sectional areas and spacing gaps formed to comply with the Chemical Mechanical Planarization metal ratio rule; and wherein each of the lines have interior sidewalls in gap regions, the interior sidewalls each having interior sidewall heights, and wherein a sum of the spacing gaps is less than a sum of the interior sidewall heights. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification