Mechanical resonating structures including a temperature compensation structure

• US 8,937,425 B2
• Filed: 12/07/2011
• Issued: 01/20/2015
• Est. Priority Date: 12/17/2008
• Status: Active Grant

• Current Assignee: Analog Devices, Inc.
• Original Assignee: Sand 9, Inc. (Analog Devices, Inc.)
• Inventors: Chen, David M., Kuypers, Jan H., Gaidarzhy, Alexei, Zolfagharkhani, Guiti
• Primary Examiner(s): ROSENAU, DEREK JOHN
• Application Number:
  US13/313,511
• Publication Number:
  US 20120074810A1
• Time in Patent Office: 1,140 Days
• Field of Search: 310/313.R, 310/313.A, 310/313.B, 310/313.C, 310/313.D, 310/346
• US Class Current: 310/346
• CPC Class Codes: H03H 9/02102 of temperature influence cutting angles H03H9/02015
• CPC Class Codes: H03H 9/02228 Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer
• CPC Class Codes: H03H 9/02448 of temperature influence
• CPC Class Codes: H03H 9/02574 of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
• CPC Class Codes: H03H 9/02834 of temperature influence cut angles H03H9/02543

Abstract

Mechanical resonating structures are described, as well as related devices and methods. The mechanical resonating structures may have a compensating structure for compensating temperature variations. The compensating structure may have multiple layers, one of which may have a stiffness that increases with increasing temperature and one of which may have a stiffness that decreases with increases in temperature.

Claims

1. A mechanical resonating structure, comprising:

an active layer; and

a compensating structure coupled to the active layer,

wherein the compensating structure comprises first, second and third layers of materials, wherein the first and third layers of materials have a stiffness that increases with increasing temperature over a temperature range, and

wherein the mechanical resonating structure is configured to support Lamb waves.

2. The mechanical resonating structure of claim 1, wherein the active layer comprises a piezoelectric material.

3. The mechanical resonating structure of claim 1, wherein a ratio of a thickness of the active layer to a combined thickness of the first and third layers is between 1:

1 and 1;

200.

4. The mechanical resonating structure of claim 3, wherein the ratio of the thickness of the active layer to the combined thickness of the first and third layers is between 1:

1 and 1;

10.

5. The mechanical resonating structure of claim 1, wherein the temperature range is from −

40°

C. to 85°

C.

6. A mechanical resonating structure, comprising:

an active layer; and

a compensating structure coupled to the active layer,

wherein the compensating structure comprises three layers of materials, wherein at least two of the three layers of materials have a stiffness that varies according to a change in temperature over a temperature range, and

wherein the mechanical resonating structure is configured to support Lamb waves, and

wherein each of the three layers of materials of the compensating structure is configured to vibrate in response to actuation of the active layer.

7. The mechanical resonating structure of claim 6, wherein the active layer comprises a piezoelectric material.

8. The mechanical resonating structure of claim 6, wherein each of the at least two of the three layers has a stiffness that increases with increases in temperature, and wherein a ratio of a thickness of the active layer to a combined thickness of the at least two of the three layers is between 1:

1 and 1;

200.

9. The mechanical resonating structure of claim 8, wherein the ratio of the thickness of the active layer to the combined thickness of the at least two of the three layers is between 1:

1 and 1;

10.

10. A mechanical resonating structure, comprising:

an active layer; and

a multi-layer compensation structure comprising multiple layers configured to provide the mechanical resonating structure with a temperature coefficient of frequency having an absolute value less than 10 ppm/K over a temperature range from −

40°

C. to 85°

C.

11. The mechanical resonating structure of claim 10, wherein the multi-layer compensation structure is configured to provide the mechanical resonating structure with a temperature coefficient of frequency having an absolute value less than 6 ppm/K over the temperature range from −

40°

C. to 85°

C.

12. The mechanical resonating structure of claim 11, wherein the multi-layer compensation structure is configured to provide the mechanical resonating structure with a temperature coefficient of frequency having an absolute value less than 3 ppm/K over the temperature range from −

40°

C. to 85°

C.

13. The mechanical resonating structure of claim 12, wherein the multi-layer compensation structure is configured to provide the mechanical resonating structure with a temperature coefficient of frequency having an absolute value less than 1 ppm/K over the temperature range from −

40°

C. to 85°

C.

14. The mechanical resonating structure of claim 10, wherein the active layer comprises a piezoelectric material, and wherein the mechanical resonating structure is a suspended mechanical resonating structure coupled to a substrate by at least one anchor.

15. A mechanical resonating structure, comprising:

an active layer formed, at least in part, of a piezoelectric material;

a first patterned electrode disposed on a first surface of the active layer;

a second electrode formed on a second surface of the active layer; and

a multi-layer compensation structure comprising at least three layers, the multi-layer compensation structure coupled to the active layer,

wherein the mechanical resonating structure is a suspended mechanical resonating structure coupled to a substrate by at least one anchor,

wherein each of the at least three layers of the multi-layer compensation structure is configured to vibrate in response to actuation of the active layer, and

wherein the mechanical resonating structure is configured to support Lamb waves.

16. The mechanical resonating structure of claim 15, wherein the active layer comprises aluminum nitride.