Organic light emitting device and method for manufacturing the same
First Claim
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1. A method for forming an organic light emitting device, the method comprising:
- forming a driving transistor including a gate electrode overlying a substrate, a semiconductor layer overlying the gate electrode and separated therefrom by a gate insulating layer, a source electrode and a drain electrode overlying the semiconductor layer and defining a channel region in the semiconductor layer;
forming an insulating layer including at least one passivation layer on the driving transistor and having a contact hole;
forming a light emitting diode overlying the driving transistor, the diode including, a first electrode electrically coupled to the drain electrode through the contact hole and overlying the driving transistor, an organic light emitting layer overlying the first electrode, and a second electrode overlying the organic light emitting layer; and
forming an auxiliary electrode between the first electrode and the channel region and electrically coupled to a ground line and to the source electrode, wherein the auxiliary electrode completely covers the channel region of the semiconductor layer, the channel region being a portion of the semiconductor layer corresponding to a position between the source electrode and the drain electrode.
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Abstract
A top emission OLED includes a driving TFT including a channel region and source and drain electrodes. A power supply, a ground line, and a light emitting diode are electrically coupled to the TFT and an auxiliary electrode is electrically coupled to the ground line and to the source electrode of the driver transistor. The auxiliary electrode resides between the light emitting diode and the channel region of the driver transistor and is configured to shield the channel region of the driver transistor from an electric field generated by the light emitting diode.
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Citations
16 Claims
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1. A method for forming an organic light emitting device, the method comprising:
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forming a driving transistor including a gate electrode overlying a substrate, a semiconductor layer overlying the gate electrode and separated therefrom by a gate insulating layer, a source electrode and a drain electrode overlying the semiconductor layer and defining a channel region in the semiconductor layer; forming an insulating layer including at least one passivation layer on the driving transistor and having a contact hole; forming a light emitting diode overlying the driving transistor, the diode including, a first electrode electrically coupled to the drain electrode through the contact hole and overlying the driving transistor, an organic light emitting layer overlying the first electrode, and a second electrode overlying the organic light emitting layer; and forming an auxiliary electrode between the first electrode and the channel region and electrically coupled to a ground line and to the source electrode, wherein the auxiliary electrode completely covers the channel region of the semiconductor layer, the channel region being a portion of the semiconductor layer corresponding to a position between the source electrode and the drain electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method for forming an organic light emitting device, the method comprising:
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forming a gate electrode on a substrate; forming a first insulating layer on the gate electrode; forming a semiconductor layer on the first insulating layer and having a channel region; forming a source electrode and a drain electrode on the semiconductor layer; forming a second insulating layer on the source electrode and the drain electrode and having a first contact hole; forming an auxiliary electrode on the second insulating layer, the auxiliary electrode being electrically connected to the source electrode through the first contact hole; forming a third insulating layer on the second insulating layer and the auxiliary electrode, a second contact hole being formed in the second and third insulating layers; forming a first electrode on the third insulating layer, the first electrode directly contacting a top surface of the third insulating layer and being electrically connected to the drain electrode through the second and third insulating layers; forming an organic light emitting layer on the first electrode; and forming a second electrode on the organic light emitting layer, wherein the auxiliary electrode completely covers the channel region of the semiconductor layer, the channel region being a portion of the semiconductor layer corresponding to a position between the source electrode and the drain electrode.
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Specification