Packaged microelectronic devices and methods for manufacturing packaged microelectronic devices
First Claim
1. A method for manufacturing stacked microelectronic devices, the method comprising:
- placing an attachment structure on a back side of a first microelectronic die, wherein the attachment structure includes a plurality of openings at least partially aligned with back side portions of electrically conductive through-substrate interconnects in the first die, and wherein the attachment structure further includes a plurality of conductive couplers formed in at least a portion of the openings and electrically coupled to corresponding through-substrate interconnects;
after placing the attachment structure on the back side of the first microelectronic die, contacting the attachment structure with a front side of a second microelectronic die;
joining the back side of the first die and the front side of the second die, wherein the first die is physically and electrically connected with the second die via the attachment structure; and
attaching a back side of the second die to a support member and electrically coupling the second die to the support member before joining the first and second dies.
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Accused Products
Abstract
Packaged microelectronic devices and methods for manufacturing packaged microelectronic devices are disclosed herein. In one embodiment, a packaged microelectronic device can include a support member, a first die attached to the support member, and a second die attached to the first die in a stacked configuration. The device can also include an attachment feature between the first and second dies. The attachment feature can be composed of a dielectric adhesive material. The attachment feature includes (a) a single, unitary structure covering at least approximately all of the back side of the second die, and (b) a plurality of interconnect structures electrically coupled to internal active features of both the first die and the second die.
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Citations
13 Claims
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1. A method for manufacturing stacked microelectronic devices, the method comprising:
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placing an attachment structure on a back side of a first microelectronic die, wherein the attachment structure includes a plurality of openings at least partially aligned with back side portions of electrically conductive through-substrate interconnects in the first die, and wherein the attachment structure further includes a plurality of conductive couplers formed in at least a portion of the openings and electrically coupled to corresponding through-substrate interconnects; after placing the attachment structure on the back side of the first microelectronic die, contacting the attachment structure with a front side of a second microelectronic die; joining the back side of the first die and the front side of the second die, wherein the first die is physically and electrically connected with the second die via the attachment structure; and attaching a back side of the second die to a support member and electrically coupling the second die to the support member before joining the first and second dies. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of processing a semiconductor substrate having a plurality of microelectronic dies, the individual dies including integrated circuitry and terminals electrically coupled to the integrated circuitry, the method comprising:
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constructing a plurality of electrically conductive through-substrate interconnects extending at least partially through the semiconductor substrate and in contact with corresponding terminals; disposing a connection structure on a back side of the semiconductor substrate, wherein the connection structure is a single, unitary structure covering at least approximately the entire back side of the semiconductor substrate and having a plurality of preformed apertures at least partially aligned with back side portions of the through-substrate interconnects; and depositing conductive material into the apertures and forming a plurality of conductive couplers in contact with back side portions of the through-substrate interconnects. - View Dependent Claims (8, 9, 10)
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11. A method of processing a semiconductor substrate having a plurality of microelectronic dies, the individual dies including integrated circuitry and terminals electrically coupled to the integrated circuitry, the method comprising:
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constructing a plurality of electrically conductive through-substrate interconnects extending at least partially through the semiconductor substrate and in contact with corresponding terminals; disposing a connection structure on a back side of the semiconductor substrate, the connection structure including a single, unitary structure covering at least approximately the entire back side of the semiconductor substrate and having a plurality of preformed apertures at least partially aligned with back side portions of the through-substrate interconnects; depositing conductive material into the apertures and forming a plurality of conductive couplers in contact with back side portions of the through-substrate interconnects; and singulating the semiconductor substrate after depositing the conductive material into the apertures.
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12. A method for manufacturing stacked microelectronic devices, the method comprising:
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placing an attachment structure on a back side of a first microelectronic die, wherein the attachment structure is a dielectric adhesive film including a plurality of preformed openings at least partially aligned with back side portions of electrically conductive through-substrate interconnects in the first die, and wherein the attachment structure further includes a plurality of conductive couplers formed in at least a portion of the openings and electrically coupled to corresponding through-substrate interconnects; contacting the attachment structure with a front side of a second microelectronic die; and joining the back side of the first die and the front side of the second die, wherein the first die is physically and electrically connected with the second die via the attachment structure.
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13. A method of processing a semiconductor substrate having a plurality of microelectronic dies, the individual dies including integrated circuitry and terminals electrically coupled to the integrated circuitry, the method comprising:
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constructing a plurality of electrically conductive through-substrate interconnects extending at least partially through the semiconductor substrate and in contact with corresponding terminals; disposing a connection structure on a back side of the semiconductor substrate, the connection structure comprising a film-over-wire die attach film having a plurality of preformed apertures at least partially aligned with back side portions of the through-substrate interconnects, and wherein the die attach film has a size and shape at least approximately identical to a size and shape of the semiconductor substrate; and depositing conductive material into the apertures and forming a plurality of conductive couplers in contact with back side portions of the through-substrate interconnects.
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Specification