×

Bonding method using porosified surfaces for making stacked structures

  • US 8,940,616 B2
  • Filed: 07/27/2012
  • Issued: 01/27/2015
  • Est. Priority Date: 07/27/2012
  • Status: Active Grant
First Claim
Patent Images

1. A method for bonding semiconductor surfaces comprising:

  • providing a first substrate with a first bonding region, wherein the first bonding region comprises a first bonding surface with a porosified region which is formed in the first substrate and is part of first substrate material;

    providing a second substrate with a second bonding region having a second bonding surface, wherein the second bonding surface includes a second conductive contact comprising a TSV contact;

    aligning the second conductive contact of the second bonding surface to be above and within the porosified region of the first bonding surface; and

    bonding the second bonding surface with the second conductive contact to the first bonding surface with the porosified region by applying pressure at an elevated temperature.

View all claims
  • 5 Assignments
Timeline View
Assignment View
    ×
    ×