Bonding method using porosified surfaces for making stacked structures
First Claim
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1. A method for bonding semiconductor surfaces comprising:
- providing a first substrate with a first bonding region, wherein the first bonding region comprises a first bonding surface with a porosified region which is formed in the first substrate and is part of first substrate material;
providing a second substrate with a second bonding region having a second bonding surface, wherein the second bonding surface includes a second conductive contact comprising a TSV contact;
aligning the second conductive contact of the second bonding surface to be above and within the porosified region of the first bonding surface; and
bonding the second bonding surface with the second conductive contact to the first bonding surface with the porosified region by applying pressure at an elevated temperature.
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Abstract
A bonded device having at least one porosified surface is disclosed. The porosification process introduces nanoporous holes into the microstructure of the bonding surfaces of the devices. The material property of a porosified material is softer as compared to a non-porosified material. For the same bonding conditions, the use of the porosified bonding surfaces enhances the bond strength of the bonded interface as compared to the non-porosified material.
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Citations
26 Claims
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1. A method for bonding semiconductor surfaces comprising:
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providing a first substrate with a first bonding region, wherein the first bonding region comprises a first bonding surface with a porosified region which is formed in the first substrate and is part of first substrate material; providing a second substrate with a second bonding region having a second bonding surface, wherein the second bonding surface includes a second conductive contact comprising a TSV contact; aligning the second conductive contact of the second bonding surface to be above and within the porosified region of the first bonding surface; and bonding the second bonding surface with the second conductive contact to the first bonding surface with the porosified region by applying pressure at an elevated temperature. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A method for bonding semiconductor surfaces comprising:
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providing a first substrate with a first bonding region with a first bonding surface, wherein the first bonding surface comprises a porosified surface which is formed in the first substrate and is part of first substrate material; providing a second substrate with a second bonding region having a second conductive contact, wherein the second conductive contact comprises a TSV contact; aligning the first bonding region with the second bonding region; and bonding the second conductive contact directly to the porosified surface of the first bonding region by applying pressure at an elevated temperature. - View Dependent Claims (20, 21, 22, 23)
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24. A method of fabricating a MEMS structure comprising:
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providing a first substrate comprising a MEMs device with a first bonding region with a first bonding surface, wherein the first bonding surface comprises a porosified surface; providing a second substrate comprising a CMOS device with a second bonding region having a second conductive contact, wherein the second conductive contact comprises a TSV contact; aligning the first bonding region with the second bonding region; and bonding the second conductive contact directly to the porosified surface of the first bonding region by applying pressure at an elevated temperature. - View Dependent Claims (25, 26)
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Specification