Process for producing silicon and oxide films from organoaminosilane precursors

• US 8,940,648 B2
• Filed: 08/12/2013
• Issued: 01/27/2015
• Est. Priority Date: 05/23/2006
• Status: Active Grant

• Current Assignee: Versum Materials US, LLC (Merck & Co., Inc.)
• Original Assignee: Air Products and Chemicals Incorporated (Linde Plc)
• Inventors: Xiao, Manchao, Lei, Xinjian, Bowen, Heather Regina, O'Neill, Mark Leonard
• Primary Examiner(s): Lee, Kyoung
• Application Number:
  US13/964,658
• Publication Number:
  US 20130330937A1
• Time in Patent Office: 533 Days
• Field of Search: None
• US Class Current: 438/781
• CPC Class Codes: C07F 7/025 without C-silicon linkages
• CPC Class Codes: C23C 16/402 Silicon dioxide
• CPC Class Codes: C23C 16/45553 characterized by the use of precursors specially adapted for ALD
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02219 the compound comprising silicon and nitrogen
• CPC Class Codes: H01L 21/02222 the compound being a silazane
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/3145 formed by deposition from a gas or vapour
• CPC Class Codes: H01L 21/31608 Deposition of SiO2 H01L21/31625, H01L21/31629 and H01L21/31633 take precedence
• CPC Class Codes: H01L 21/31633 Deposition of carbon doped silicon oxide, e.g. SiOC

Abstract

A method for depositing a silicon containing film on a substrate using an organoaminosilane is described herein. The organoaminosilanes are represented by the formulas:

wherein R is selected from a C₁-C₁₀ linear, branched, or cyclic, saturated or unsaturated alkyl group with or without substituents; a C₅-C₁₀ aromatic group with or without substituents, a C₃-C₁₀ heterocyclic group with or without substituents, or a silyl group in formula C with or without substituents, R¹ is selected from a C₃-C₁₀ linear, branched, cyclic, saturated or unsaturated alkyl group with or without substituents; a C₆-C₁₀ aromatic group with or without substituents, a C₃-C₁₀ heterocyclic group with or without substituents, a hydrogen atom, a silyl group with substituents and wherein R and R¹ in formula A can be combined into a cyclic group and R² representing a single bond, (CH₂), chain, a ring, C₃-C₁₀ branched alkyl, SiR₂, or SiH₂.

Claims

1. A method for forming a silicon oxide film on a substrate via a vapor deposition process, the method comprising:

introducing an organoaminosilane represented by the formulas;

2. The method of claim 1 wherein the vapor deposition process comprises a plasma.

3. The method of claim 2 wherein the plasma is directly generated in the deposition chamber.

4. The method of claim 2 wherein the plasma is generated outside of the deposition chamber and supplied into the deposition chamber.

5. A composition for depositing a silicon-containing film by a vapor deposition process, the composition comprising:

an organoaminosilane precursor represented by the following formula A;

6. The composition of claim 5 wherein R and R¹ in Formula A are each independently selected from the group consisting of isopropyl, t-butyl, sec-butyl, t-pentyl, and sec-pentyl groups.

7. The composition of claim 6 wherein R and R¹ in Formula A are each isopropyl.

8. The composition of claim 6 wherein R and R¹ in Formula A are each sec-butyl.

9. The composition of claim 5 wherein R and R¹ in Formula A are combined into a cyclic group.

10. A composition for depositing a silicon-containing film in a vapor deposition process, the composition comprising:

an organoaminosilane precursor represented by the following formula; and

11. The composition of claim 10 wherein the gas comprises the inert gas.

12. The composition of claim 11 wherein the inert gas comprises helium.

13. The composition of claim 10 wherein the composition is contained in a pressurizable vessel fitted with the proper valves and fittings to allow delivery of to the process reactor.

14. A precursor formulation comprising:

an organoaminosilane represented by the formulae;