Process for producing silicon and oxide films from organoaminosilane precursors
First Claim
1. A method for forming a silicon oxide film on a substrate via a vapor deposition process, the method comprising:
- introducing an organoaminosilane represented by the formulas;
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Abstract
A method for depositing a silicon containing film on a substrate using an organoaminosilane is described herein. The organoaminosilanes are represented by the formulas:
wherein R is selected from a C1-C10 linear, branched, or cyclic, saturated or unsaturated alkyl group with or without substituents; a C5-C10 aromatic group with or without substituents, a C3-C10 heterocyclic group with or without substituents, or a silyl group in formula C with or without substituents, R1 is selected from a C3-C10 linear, branched, cyclic, saturated or unsaturated alkyl group with or without substituents; a C6-C10 aromatic group with or without substituents, a C3-C10 heterocyclic group with or without substituents, a hydrogen atom, a silyl group with substituents and wherein R and R1 in formula A can be combined into a cyclic group and R2 representing a single bond, (CH2), chain, a ring, C3-C10 branched alkyl, SiR2, or SiH2.
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Citations
14 Claims
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1. A method for forming a silicon oxide film on a substrate via a vapor deposition process, the method comprising:
introducing an organoaminosilane represented by the formulas; - View Dependent Claims (2, 3, 4)
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5. A composition for depositing a silicon-containing film by a vapor deposition process, the composition comprising:
an organoaminosilane precursor represented by the following formula A; - View Dependent Claims (6, 7, 8, 9)
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10. A composition for depositing a silicon-containing film in a vapor deposition process, the composition comprising:
an organoaminosilane precursor represented by the following formula; and - View Dependent Claims (11, 12, 13)
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14. A precursor formulation comprising:
an organoaminosilane represented by the formulae;
Specification