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Semiconductor device and method for manufacturing the same

  • US 8,941,112 B2
  • Filed: 12/20/2011
  • Issued: 01/27/2015
  • Est. Priority Date: 12/28/2010
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising:

  • an oxide semiconductor film comprising;

    a first region;

    a pair of second regions, the first region located between the pair of second regions; and

    a pair of third regions, the first region and the pair of second regions located between the pair of third regions;

    a gate insulating film over the oxide semiconductor film; and

    a first electrode over the gate insulating film and overlapping with the first region,wherein the first region is a c-axis aligned crystalline oxide semiconductor region,wherein each of the pair of second regions and the pair of third regions is an amorphous oxide semiconductor region comprising a dopant,wherein a dopant concentration of the pair of third regions is higher than a dopant concentration of the pair of second regions, andwherein the gate insulating film overlaps with the pair of third regions.

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