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Silicon carbide semiconductor device and method of manufacturing the same

  • US 8,941,122 B2
  • Filed: 04/02/2013
  • Issued: 01/27/2015
  • Est. Priority Date: 04/03/2012
  • Status: Active Grant
First Claim
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1. A silicon carbide semiconductor device comprising:

  • a semiconductor layer that has a main surface and a rear surface being an opposite surface of the main surface and is made of single crystal silicon carbide; and

    a first electrode that forms an ohmic junction with the semiconductor substrate,wherein a junction portion of the first electrode with the semiconductor substrate is formed of a metal reaction layer in which an impurity included in the first electrode is introduced and a metal atom that forms the first electrode reacts with at least one of carbon or silicon that forms the semiconductor substrate, andwherein, in the metal reaction layer, a diffusion depth of the impurity and a diffusion depth of the metal atom are the same.

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